SCHEMBL2863383

SCHEMBL2863383

[CH2]OC1CCC(C(C)(C)C)CC1

nearest known ligand 0.37

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
MAPT P10636 2/20 0.37
HTT P42858 3/20 0.36
MEN1 O00255 2/20 0.36
KMT2A Q03164 2/20 0.36
APOBEC3A P31941 1/20 0.36
APOBEC3G Q9HC16 1/20 0.36
SMN1; SMN2 Q16637 3/20 0.35
KDM4E B2RXH2 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
CYP19A1 P11511 1/20 0.34
TSHR P16473 1/20 0.33
NPSR1 Q6W5P4 1/20 0.33
NPC1 O15118 1/20 0.33
RAB9A P51151 1/20 0.33
EPHX1 P07099 1/20 0.32
GAA P10253 1/20 0.31
LIPA P38571 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6382164 0.78 MAPT (0.39) MAPTHTTMEN1KMT2AAPOBEC3A
SCHEMBL4552150 0.78 MAPT (0.39) MAPTHTTMEN1KMT2AAPOBEC3A
SCHEMBL68265 0.76
SCHEMBL5270433 0.76
SCHEMBL5615220 0.76 EPHX1 (0.42) MAPTHTTMEN1KMT2AAPOBEC3A
SCHEMBL22797 0.76
SCHEMBL2720308 0.76 MAPT (0.38) MAPTHTTMEN1KMT2AAPOBEC3A
SCHEMBL12384730 0.76 MAPT (0.38) MAPTHTTMEN1KMT2AAPOBEC3A
SCHEMBL19272362 0.76 MAPT (0.38) MAPTHTTMEN1KMT2AAPOBEC3A
SCHEMBL2719576 0.74 MAPT (0.41) MAPTHTTMEN1KMT2AAPOBEC3A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7700257-B2 Photoresist composition and resist pattern formation method by the use thereof TOKYO OHKA KOGYO CO., LTD. (JP) 2010-04-20 US disclosed
US-7264918-B2 Resist composition for liquid immersion exposure process and method of forming resist pattern therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2007-09-04 US disclosed
US-20070148581-A1 Photoresist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD (JP) 2007-06-28 US disclosed
US-20070031755-A1 Material for forming resist-protecting film for immersion exposure process, resist-protecting film made of such material, and method for forming resist pattern using such resist-protec- ting film TOKO OHKA KOGYO CO., LTD. (JP) 2007-02-08 US disclosed
US-20060166130-A1 Photoresist composition and method for forming resist pattern using the same TOKYO OHKA KOGYO CO., LTD. (JP) 2006-07-27 US disclosed
US-20060154170-A1 Resist composition for liquid immersion exposure process and method of forming resist pattern therewith TOKYO OHKA KOGYO CO., LTD. (JP) 2006-07-13 US disclosed
EP-1662323-A1 MATERIAL FOR FORMING RESIST-PROTECTING FILM FOR IMMERSION EXPOSURE PROCESS, RESIST-PROTECTING FILM MADE OF SUCH MATERIAL, AND METHOD FOR FORMING RESIST PATTERN USING SUCH RESIST-PROTECTING FILM TOKYO OHKA KOGYO CO., LTD. (JP) 2006-05-31 EP disclosed
EP-1610178-A1 RESIST COMPOSITION FOR LIQUID IMMERSION EXPOSURE PROCESS AND METHOD OF FORMING RESIST PATTERN THEREWITH TOKYO OHKA KOGYO CO., LTD. (JP) 2005-12-28 EP disclosed
US-6180316-B1 SUITABLE FOR USE AS CHEMICALLY AMPLIFIED RESIST USED IN MANUFACTURING OF INTEGRATED CIRCUITS JSR CORPORATION (JP) 2001-01-30 US disclosed
EP-0930541-A1 Radiation sensitive resin composition JSR Corporation (JP) 1999-07-21 EP disclosed