SCHEMBL2868965

SCHEMBL2868965

O[Si](O)(O)O.[Tm]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23354573 1.00
SCHEMBL9718893 0.91
SCHEMBL28327165 0.91
SCHEMBL28003472 0.91
SCHEMBL6264766 0.89
SCHEMBL1170 0.89
SCHEMBL33415 0.89
SCHEMBL11227552 0.89
Charcoal, Activated SCHEMBL29440 0.89
SCHEMBL8425118 0.89

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117253946-B Light-emitting element of silicon-based rare earth doped light-emitting material and preparation method thereof 安徽科技学院 2025-03-28 CN claimed
CN-117253946-A Light-emitting element of silicon-based rare earth doped light-emitting material and preparation method thereof 安徽科技学院 2023-12-19 CN claimed
US-12628399-B2 Methods and systems for forming a layer comprising a group 13 element on a substrate ASM IP HOLDING B.V. (NL) 2026-05-12 US disclosed
US-12381087-B2 Methods for filling a gap and related systems and devices ASM IP HOLDING B.V. (NL) 2025-08-05 US disclosed
US-12362171-B2 Methods and systems for forming a layer comprising aluminum, titanium, and carbon ASM IP HOLDING B.V. (NL) 2025-07-15 US disclosed
CN-117253946-B Light-emitting element of silicon-based rare earth doped light-emitting material and preparation method thereof 安徽科技学院 2025-03-28 CN disclosed
US-20240153767-A1 SEMICONDUCTING OXIDE CHANNEL FOR 3D NAND AND METHOD OF MAKING ASM IP HOLDING B.V. (NL) 2024-05-09 US disclosed
CN-117995653-A Semiconductor oxide channel for 3D NAND and method of manufacturing the same ASM IP私人控股有限公司 2024-05-07 CN disclosed
CN-117253946-A Light-emitting element of silicon-based rare earth doped light-emitting material and preparation method thereof 安徽科技学院 2023-12-19 CN disclosed
CN-117144332-A Method for forming group 13 element-containing layer on substrate ASM IP私人控股有限公司 2023-12-01 CN disclosed
US-20230386846-A1 METHODS AND SYSTEMS FOR FORMING A LAYER COMPRISING A GROUP 13 ELEMENT ON A SUBSTRATE ASM IP HOLDING B.V. (NL) 2023-11-30 US disclosed
US-20060210800-A1 Environmental barrier layer for silcon-containing substrate and process for preparing same NAVY, DEPT OF THE 2006-09-21 US disclosed
US-20060211241-A1 Protective layer for barrier coating for silicon-containing substrate and process for preparing same NAVY, DEPT. OF THE 2006-09-21 US disclosed
US-6780476-B2 REACTING A ORGANOMETALLIC COMPOUND AND ORGANOSILICON COMPOUND DISSOLVING IN SOLVENT; VAPOR DEPOSITION RENESAS TECHNOLOGY CORP. (JP) 2004-08-24 US disclosed
US-20030100778-A1 Epoxidation catalysts containing metals of the lanthanoide series BAYER AKTIENGESELLSCHAFT (DE) 2003-05-29 US disclosed
CN-1416426-A Epoxidation catalysts containing lanthanide metals BAYER AG (DE) 2003-05-07 CN disclosed
US-20030054102-A1 Liquid material for chemical vapor deposition, method of forming film by chemical vapor deposition and chemical vapor deposition apparatus MITSUBISHI DENKI KABUSHIKI KAISHA (JP) 2003-03-20 US disclosed
EP-1263748-A1 EPOXIDATION CATALYSTS CONTAINING METALS OF THE LANTHANOIDE SERIES Bayer Aktiengesellschaft (DE) 2002-12-11 EP disclosed
EP-1125933-A1 Epoxidation catalyst containing metals of the lanthanoide series Bayer Aktiengesellschaft (DE) 2001-08-22 EP disclosed
WO-2001058887-A1 EPOXIDATION CATALYSTS CONTAINING METALS OF THE LANTHANOIDE SERIES BAYER AKTIENGESELLSCHAFT (DE) 2001-08-16 WO disclosed