SCHEMBL2883717

SCHEMBL2883717

[Co+2].[O-2].[O-2].[Sr+2]

nearest known ligand 0.00

Known targets — ChEMBL curated mechanism

ATP4AATP4B

The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL31382384 0.87
SCHEMBL31148936 0.87
SCHEMBL13386984 0.87
SCHEMBL1156028 0.87
SCHEMBL8733485 0.87
SCHEMBL31148937 0.87
SCHEMBL5532897 0.87
SCHEMBL12983321 0.87
SCHEMBL3631249 0.87
SCHEMBL320880 0.87

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 108 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116648040-B Electronic device and control method of electronic device VIVO MOBILE COMMUNICATION CO.,LTD. (CN) 2026-05-26 CN claimed
US-20250318450-A1 RESISTIVE MEMORY CELL USING AN INTERFACIAL TRANSITION METAL COMPOUND LAYER AND METHOD OF FORMING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2025-10-09 US claimed
US-12364173-B2 Resistive memory cell using an interfacial transition metal compound layer and method of forming the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) 2025-07-15 US claimed
CN-115132906-B Display panel and display device 厦门天马微电子有限公司 2024-09-27 CN claimed
CN-118289824-A Gadolinium doped strontium cobalt oxygen perovskite anode material and preparation method thereof 合肥综合性国家科学中心能源研究院(安徽省能源实验室) 2024-07-05 CN claimed
CN-116648040-A Electronic device and control method of electronic device 维沃移动通信有限公司 2023-08-25 CN claimed
US-11462683-B2 CMOS-compatible protonic resistive devices MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2022-10-04 US claimed
US-20220223788-A1 RESISTIVE MEMORY CELL USING AN INTERFACIAL TRANSITION METAL COMPOUND LAYER AND METHOD OF FORMING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) 2022-07-14 US claimed
US-20220209107-A1 CMOS-COMPATIBLE PROTONIC RESISTIVE DEVICES MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 2022-06-30 US claimed
CN-114551720-A Resistive memory cell using interfacial transition metal compound layer and method of forming the same 台湾积体电路制造股份有限公司 2022-05-27 CN claimed
US-20140242493-A1 DIRECT CARBON ELECTROCHEMICAL CELL UNIVERSITY COURT OF THE UNIVERSITY OF ST. ANDREWS (GB) 2014-08-28 US claimed
US-20140153312-A1 MEMORY CELLS HAVING FERROELECTRIC MATERIALS MICRON TECHNOLOGY, INC. (US) 2014-06-05 US claimed
WO-2013061067-A1 DIRECT CARBON ELECTROCHEMICAL CELL UNIVERSITY COURT OF THE UNIVERSITY OF ST ANDREWS (GB) 2013-05-02 WO claimed
JP-2010541177-A 2010-12-24 JP claimed
EP-2215284-A2 METHOD OF MANUFACTURE OF AN ELECTRODE FOR A FUEL CELL The Court Of Edinburgh Napier University (GB) 2010-08-11 EP claimed
WO-2009044144-A2 METHOD OF MANUFACTURE OF AN ELECTRODE FOR A FUEL CELL THE COURT OF NAPIER UNIVERSITY (GB) 2009-04-09 WO claimed
US-7002176-B2 Vertical organic transistor RICOH COMPANY, LTD. (JP) 2006-02-21 US claimed
US-20040004215-A1 Vertical organic transistor RICOH COMPANY, LTD. (JP) 2004-01-08 US claimed
US-5785837-A Preparation of transparent conductors ferroelectric memory materials and ferrites MIDWEST RESEARCH INSTITUTE (US) 1998-07-28 US claimed
EP-0721224-A2 Focal plane array for hybrid thermal imaging system and method TEXAS INSTRUMENTS INCORPORATED (US) 1996-07-10 EP claimed