Thiourea

Thiourea

SCHEMBL2928082

NC(N)=S.[Cu]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Thiourea SCHEMBL7175549 0.94
Thiourea SCHEMBL7593783 0.94
Thiourea SCHEMBL29114567 0.94
Thiourea SCHEMBL850383 0.93
Thiourea SCHEMBL30536984 0.93
Thiourea SCHEMBL30536978 0.93
Thiourea SCHEMBL1008 0.93
Thiourea SCHEMBL15353268 0.88 TSHR (0.67)
Thiourea SCHEMBL15353576 0.88 TSHR (0.67)
Thiourea SCHEMBL5590390 0.86

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 125 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-108807145-B Method for preparing efficient copper indium selenide and copper indium gallium selenide thin-film solar cell 南京邮电大学 2020-08-11 CN claimed
CN-109817735-B Solution method for preparing high-efficiency copper indium selenide and copper indium gallium selenide thin-film solar cell 南京邮电大学 2020-08-04 CN claimed
CN-110079826-A A method of recycling nickel sulfate from the high impurity High nickel nodular iron plate of Copper making 昆明理工大学 2019-08-02 CN claimed
CN-109817735-A Solwution method prepares efficient copper indium selenide and copper-indium-galliun-selenium film solar cell 南京邮电大学 2019-05-28 CN claimed
CN-109516492-A Cu2Preparation method of S micro-nanocrystalline 合肥学院 2019-03-26 CN claimed
CN-108948052-A A kind of N- heterocyclic amino group thiocarbamide mixed-valence copper complex and application thereof 南通大学 2018-12-07 CN claimed
CN-108807145-A A method of preparing efficient copper indium selenide and copper-indium-galliun-selenium film solar cell 南京邮电大学 2018-11-13 CN claimed
CN-103755084-A Method for governance and recycling of thiourea in fumaric acid wastewater KUNSHAN FENFA INSULATING MATERIALS CO LTD 2014-04-30 CN claimed
US-6602440-B2 Etching with composition comprising acid, oxidizing agent, complexing agent, and metal complex which precipitates when applied; for production of printed circuit boards ATOTECH DEUTSCHLAND GMBH (DE) 2003-08-05 US claimed
EP-0926265-B1 Method and compositions for producing copper surfaces for improved bonding and articles made therefrom ATOTECH DEUTSCHLAND GMBH (DE) 2002-11-13 EP claimed
US-20020056702-A1 Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom ATOTECH USA, LLC 2002-05-16 US claimed
US-20020048685-A1 Method of producing copper surfaces for improved bonding, compositions used therein and articles made therefrom ATOTECH USA, LLC 2002-04-25 US claimed
US-6063172-A ELECTROLESS DEPOSITION OF TIN, LEAD, BISMUTH, INDIUM, GALLIUM AND GERMANIUM MAY BE DEPOSITED ONTO A METAL SURFACE UTILIZING A COMPLEXING AGENT SELECTED FROM THE GROUP CONSISTING OF THIOUREA COMPOUNDS AND IMIDAZOLE THIONES, AND AN AMIDINE MCGEAN-ROHCO, INC. (US) 2000-05-16 US claimed
EP-0926265-A1 Method and compositions for producing copper surfaces for improved bonding and articles made therefrom McGean-Rohco, Inc. (US) 1999-06-30 EP claimed
EP-0545216-B1 Process for extending the life of a displacement plating bath ROHCO INC MCGEAN (US) 1997-01-29 EP claimed
EP-0545216-A2 Process for extending the life of a displacement plating bath MCGEAN-ROHCO, INC. (US) 1993-06-09 EP claimed
US-5217751-A Stabilizing and extending life of aqueous bath by adding free metal different from substrate, ionizable compounds of free metal, complexing agent and acid MCGEAN-ROHCO, INC. (US) 1993-06-08 US claimed
US-5211831-A Redox system for plating metals on substrates MCGEAN-ROHCO, INC. (US) 1993-05-18 US claimed
CN-121174678-A Method for recycling and recoating gallium copper indium proportion in waste film photocell 兰州理工大学 2025-12-19 CN disclosed
US-4100202-A Oxidative coupling of alkylphenols or 1-naphthols catalyzed by cupric complexes ICI AMERICAS INC. (US) 1978-07-11 US disclosed