SCHEMBL2950200

SCHEMBL2950200

CCC(C)O[Si](C(C)C)(C(C)C)C(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2958647 0.82
SCHEMBL645358 0.77
SCHEMBL431902 0.77
SCHEMBL285341 0.75 TSHR (0.32)
SCHEMBL29049244 0.74
SCHEMBL7046874 0.74
SCHEMBL1226913 0.73
SCHEMBL427237 0.73 TSHR (0.30)
SCHEMBL646646 0.73 TSHR (0.30)
SCHEMBL28553298 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-102540543-B Manufacture method, liquid crystal display cells and the polymer composition of liquid crystal display cells JSR CO., LTD. (JP) 2016-05-18 CN disclosed
US-20160027946-A1 OPTICAL DEVICE JSR CORPORATION (JP) 2016-01-28 US disclosed
CN-103131431-B MATERIALS FOR DISPLAY, crystal aligning agent and liquid crystal display device JSR CO., LTD. (JP) 2015-10-07 CN disclosed
CN-102311739-B The manufacture method of liquid crystal aligning agent, liquid crystal display device and liquid crystal display device JSR CO., LTD. (JP) 2015-09-16 CN disclosed
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
CN-103131431-A Display material, liquid crystal alignment agent and liquid crystal display element JSR CORP 2013-06-05 CN disclosed
CN-102540543-A Method for making liquid crystal display element, liquid crystal display element, and polymer composite JSR CORP 2012-07-04 CN disclosed
CN-102311739-A The method of manufacture of liquid crystal aligning agent, liquid crystal display device and liquid crystal display device JSR CORP 2012-01-11 CN disclosed
US-20100283133-A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE HAMADA YOSHITAKA 2010-11-11 US disclosed
US-20100233482-A1 Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device HAMADA YOSHITAKA 2010-09-16 US disclosed
US-7786022-B2 Method for forming insulating film with low dielectric constant SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-08-31 US disclosed
US-7754330-B2 Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-07-13 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090294726-A1 ORGANIC SILICON OXIDE FINE PARTICLES AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-12-03 US disclosed
US-20090294922-A1 ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE PANASONIC CORPORATION (JP) 2009-12-03 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
US-20080290521-A1 FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed
US-20080292863-A1 SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM SHIN ETSU CHEMICAL CO., LTD. 2008-11-27 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed