SCHEMBL2968075

SCHEMBL2968075

Cc1cc2ccccc2c(C)c1S

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ CYP1A2 P05177 6/20 0.50
▸ CYP2A6 P11509 4/20 0.50
▸ TSHR P16473 3/20 0.50
▸ ALDH1A1 P00352 5/20 0.43
▸ HSD17B10 Q99714 4/20 0.42
▸ HPGD P15428 2/20 0.42
▸ HIF1A Q16665 2/20 0.39
▸ CYP1B1 Q16678 1/20 0.39
▸ KDM4E B2RXH2 1/20 0.38
▸ GAA P10253 1/20 0.38
▸ CCR1 P32246 1/20 0.37
▸ CCR8 P51685 1/20 0.37
▸ L3MBTL1 Q9Y468 2/20 0.36
▸ CYP3A4 P08684 1/20 0.36
▸ MAPK1 P28482 1/20 0.36
▸ CASP1 P29466 1/20 0.36
▸ RAB9A P51151 1/20 0.36
▸ CASP7 P55210 1/20 0.36
▸ ATM Q13315 1/20 0.36
▸ TRPM4 Q8TD43 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6650976 0.83 CYP1A2 (0.48) CYP1A2CYP2A6TSHRALDH1A1HSD17B10
SCHEMBL6274090 0.83 CYP2A6 (0.45) CYP1A2CYP2A6TSHRALDH1A1HSD17B10
SCHEMBL459684 0.79 CYP1A2 (0.56) CYP1A2CYP2A6TSHRALDH1A1HSD17B10
SCHEMBL27486426 0.79 CYP1A2 (0.45) CYP1A2CYP2A6ALDH1A1HSD17B10HPGD
SCHEMBL16283929 0.79 CYP1A2 (0.42) CYP1A2CYP2A6TSHRALDH1A1HSD17B10
SCHEMBL10630656 0.77 CYP1A2 (0.54) CYP1A2CYP2A6TSHRALDH1A1HSD17B10
SCHEMBL10630661 0.77 CYP1A2 (0.54) CYP1A2CYP2A6TSHRALDH1A1HSD17B10
Ammonia Solution, Strong SCHEMBL4639022 0.77 CYP1A2 (0.54) CYP1A2CYP2A6TSHRALDH1A1HSD17B10
Hydrochloric Acid SCHEMBL28848790 0.77 CYP1A2 (0.54) CYP1A2CYP2A6TSHRALDH1A1HSD17B10
SCHEMBL119090 0.76 CYP1A2 (0.56) CYP1A2CYP2A6TSHRALDH1A1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-101034260-B Photosensitive resin composition DONGJIN SEMICOHEM CO LTD 2012-07-18 — — CN claimed
CN-101034260-A Photosensitive resin composition DONGJIN SEMICHEM CO LTD (KR) 2007-09-12 — — CN claimed
CN-115113482-A Negative photosensitive resin composition, pattern forming method, cured film forming method, interlayer insulating film, and surface protective film 信越化学工业株式会社 2022-09-27 — — CN disclosed
WO-2021079679-A1 PHOTOSENSITIVE RESIN COMPOSITION, PHOTOSENSITIVE DRY FILM, AND PATTERN FORMATION METHOD 信越化学工業株式会社 2021-04-29 — — WO disclosed
CN-107615168-A Radiation-sensitive composition 日产化学工业株式会社 2018-01-19 — — CN disclosed
CN-103797418-B A kind of negative light-sensitive resin combination, pattern formation method, cured film, dielectric film, colour filter and display device 东京应化工业株式会社 2017-06-13 — — CN disclosed
CN-106019841-A Photosensitive resin composition, pattern forming method, cured film, insulation film, color filter and display device 东京应化工业株式会社 2016-10-12 — — CN disclosed
CN-105676601-A Pretreatment method of glass substrate used for forming etching mask 东京应化工业株式会社 2016-06-15 — — CN disclosed
CN-103163730-B Chemical amplification type photoetching compositions is utilized to carry out the method for minor groove patterning TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (CN) 2016-03-09 — — CN disclosed
CN-105283432-A Composition comprising a compound containing a vinyl group TOKYO OHKA KOGYO CO LTD 2016-01-27 — — CN disclosed
CN-104909581-A Pretreatment method of glass substrate used for forming etching mask TOKYO OHKA KOGYO COMPANY 2015-09-16 — — CN disclosed
US-20070231738-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 — — US disclosed
CN-101034260-A Photosensitive resin composition DONGJIN SEMICHEM CO LTD (KR) 2007-09-12 — — CN disclosed
CN-1983031-A Photosensitive resin composition for organic light emitting diodes DONGJIN SEMICHEM CO LTD (KR) 2007-06-20 — — CN disclosed
CN-1825206-A Negative resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2006-08-30 — — CN disclosed
EP-1693707-A1 Positive resist composition, and patterning process using the same Shinetsu Chemical Co., Ltd. (JP) 2006-08-23 — — EP disclosed
US-20060183051-A1 Positive resist composition, and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2006-08-17 — — US disclosed
CN-1607461-A Resist polymer, resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2005-04-20 — — CN disclosed
CN-1578794-A Anhydrous, liquid phase process for preparing hydroxyl containing polymers of enhanced purity DUPONT ELECTRONIC TECHNOLOGIES (US) 2005-02-09 — — CN disclosed
CN-1550896-A Processes for preparing photoresist compositions and the product ��Ļ���Ű˾ 2004-12-01 — — CN disclosed
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