SCHEMBL296818

SCHEMBL296818

[BeH2].[SeH2].[Zn]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL296862 0.87
SCHEMBL27509900 0.87
SCHEMBL28095459 0.82
SCHEMBL27350979 0.82
SCHEMBL11070409 0.82
SCHEMBL27727353 0.82
SCHEMBL160387 0.82
SCHEMBL2935108 0.82
SCHEMBL5840167 0.67
SCHEMBL8026808 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8216370-B2 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2012-07-10 US claimed
EP-1715086-B1 Method for reducing defect concentrations in crystals GEN ELECTRIC (US) 2012-03-14 EP claimed
EP-1378591-B1 Method for removing defects in crystals DIAMOND INNOVATIONS INC (US) 2009-03-25 EP claimed
US-7175704-B2 Method for reducing defect concentrations in crystals DIAMOND INNOVATIONS, INC. (US) 2007-02-13 US claimed
EP-1715086-A1 Method for reducing defect concentrations in crystals GENERAL ELECTRIC COMPANY (US) 2006-10-25 EP claimed
US-20060096521-A1 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. 2006-05-11 US claimed
EP-1378591-A1 Method for removing defects in crystals General Electric Company (US) 2004-01-07 EP claimed
US-20040000266-A1 Method for reducing defect concentrations in crystals Diamond Innovations, Inc 2004-01-01 US claimed
CN-103346228-B Semiconductor device with a plurality of semiconductor chips 晶元光电股份有限公司 2017-06-13 CN disclosed
CN-103346228-A Semiconductor device HUGA OPTOTECH INC 2013-10-09 CN disclosed
CN-102201510-B Semiconductor device with a plurality of semiconductor chips HUGA OPTOTECH INC 2013-07-24 CN disclosed
WO-2013043809-A2 HETEROSTRUCTURE SI SOLAR CELLS USING WIDE-BANDGAP SEMICONDUCTORS ARIZONA BOARD OF REGENTS, A BODY CORPORATE OF THE STATE OF ARIZONA (US) 2013-03-28 WO disclosed
CN-102074620-B Semiconductor light emitting element HUGA OPTOTECH INC 2012-07-25 CN disclosed
US-8216370-B2 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2012-07-10 US disclosed
US-7175704-B2 Method for reducing defect concentrations in crystals DIAMOND INNOVATIONS, INC. (US) 2007-02-13 US disclosed
EP-1715086-A1 Method for reducing defect concentrations in crystals GENERAL ELECTRIC COMPANY (US) 2006-10-25 EP disclosed
US-20060096521-A1 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. 2006-05-11 US disclosed
EP-1378591-A1 Method for removing defects in crystals General Electric Company (US) 2004-01-07 EP disclosed
US-20040000266-A1 Method for reducing defect concentrations in crystals Diamond Innovations, Inc 2004-01-01 US disclosed
CN-1223022-A Beryllium-containing II-VI blue-green laser diode MINNESOTA MINING & MFG (US) 1999-07-14 CN disclosed