SCHEMBL297480

SCHEMBL297480

[Cd+2].[P-3].[P-3].[Sn+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL134757 0.82
SCHEMBL2225180 0.82
Water SCHEMBL31468848 0.67
SCHEMBL5537113 0.67
SCHEMBL31579260 0.67
SCHEMBL11211230 0.67
Zinc Ion SCHEMBL11210912 0.67
SCHEMBL49331 0.67
SCHEMBL3224508 0.67
Zinc Ion SCHEMBL9994219 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8216370-B2 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2012-07-10 US claimed
EP-1378591-B1 Method for removing defects in crystals DIAMOND INNOVATIONS INC (US) 2009-03-25 EP claimed
EP-1378591-A1 Method for removing defects in crystals General Electric Company (US) 2004-01-07 EP claimed
US-20040000266-A1 Method for reducing defect concentrations in crystals Diamond Innovations, Inc 2004-01-01 US claimed
US-8216370-B2 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2012-07-10 US disclosed
EP-1715086-B1 Method for reducing defect concentrations in crystals GEN ELECTRIC (US) 2012-03-14 EP disclosed
EP-1378591-B1 Method for removing defects in crystals DIAMOND INNOVATIONS INC (US) 2009-03-25 EP disclosed
US-7175704-B2 Method for reducing defect concentrations in crystals DIAMOND INNOVATIONS, INC. (US) 2007-02-13 US disclosed
EP-1715086-A1 Method for reducing defect concentrations in crystals GENERAL ELECTRIC COMPANY (US) 2006-10-25 EP disclosed
US-20060096521-A1 Method for reducing defect concentration in crystals MOMENTIVE PERFORMANCE MATERIALS INC. 2006-05-11 US disclosed
EP-1378591-A1 Method for removing defects in crystals General Electric Company (US) 2004-01-07 EP disclosed
US-20040000266-A1 Method for reducing defect concentrations in crystals Diamond Innovations, Inc 2004-01-01 US disclosed
US-3922553-A Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes BELL TELEPHONE LABOR INC 1975-11-25 US disclosed
US-3913212-A Near-infrared light emitting diodes and detectors employing CdSnP{HD 2{B :InP heterodiodes BELL TELEPHONE LABOR INC 1975-10-21 US disclosed
US-3875451-A Near-infrared light-emitting and light-detecting indium phosphide homodiodes including cadmium tin phosphide therein BELL TELEPHONE LABOR INC 1975-04-01 US disclosed
US-3750046-A SILVER-DOPED CADMIUM TIN PHOSPHIDE LASER BELL TELEPHONE LABOR INC 1973-07-31 US disclosed
US-3750046-A SILVER-DOPED CADMIUM TIN PHOSPHIDE LASER BELL TELEPHONE LABOR INC 1973-07-31 US disclosed