SCHEMBL2980236

SCHEMBL2980236

[Mn].[Ni].[SbH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28271234 0.87
SCHEMBL28736788 0.87
SCHEMBL28736789 0.87
SCHEMBL7169787 0.82
SCHEMBL8504992 0.82
SCHEMBL23647334 0.82
SCHEMBL1415230 0.82
SCHEMBL841304 0.82
SCHEMBL2679608 0.82
SCHEMBL196155 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12154603-B1 Spin-orbit torque (SOT) writer with topological insulator materials WESTERN DIGITAL TECHNOLOGIES, INC. (US) 2024-11-26 US claimed
US-20220199687-A1 THREE-DIMENSIONAL FUNNEL-LIKE SPIN TRANSFER TORQUE MRAM CELL WITH A NON-UNIFORM THICKNESSES IN EACH LAYER INTERNATIONAL BUSINESS MACHINES CORPORATION 2022-06-23 US claimed
CN-109267152-A A kind of preparation method of the nickel manganese-base alloy columnar single crystal particle of controlled diameter 哈尔滨工业大学 2019-01-25 CN claimed
US-5629922-A Electron tunneling device using ferromagnetic thin films MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 1997-05-13 US claimed
CN-109267152-A A kind of preparation method of the nickel manganese-base alloy columnar single crystal particle of controlled diameter 哈尔滨工业大学 2019-01-25 CN disclosed
US-7772630-B2 Magnetic switching element of a magnetic memory cell having a ferromagnetic layer formed between a gate insulating film and a magnetic semiconductor layer KABUSHIKI KAISHA TOSHIBA (JP) 2010-08-10 US disclosed
CN-100501865-C Magnetic memory TOSHIBA KK (JP) 2009-06-17 CN disclosed
CN-100407470-C magnetic switch element and magnetic memory TOSHIBA CORP (JP) 2008-07-30 CN disclosed
US-20080121945-A1 MAGNETIC SWITCHING ELEMENT AND A MAGNETIC MEMORY KABUSHIKI KAISHA TOSHIBA (JP) 2008-05-29 US disclosed
US-7349247-B2 Multi-layer magnetic switching element comprising a magnetic semiconductor layer having magnetization induced by applied voltage KABUSHIKI KAISHA TOSHIBA (JP) 2008-03-25 US disclosed
CN-100342451-C Magnetic memory TOSHIBA KK (JP) 2007-10-10 CN disclosed
CN-1290117-C Magnetic memory TOSHIBA KK (JP) 2006-12-13 CN disclosed
US-20030151944-A1 Magnetic switching element and a magnetic memory KABUSHIKI KAISHA TOSHIBA (JP) 2003-08-14 US disclosed
US-20030147289-A1 Magnetic memory KABUSHIKI KAISHA TOSHIBA (JP) 2003-08-07 US disclosed
CN-1433020-A Magnetic memory TOSHIBA KK (JP) 2003-07-30 CN disclosed
CN-1433021-A Magnetic memory TOSHIBA KK (JP) 2003-07-30 CN disclosed
CN-1430292-A Magnetic switch element and magnetic memory TOSHIBA KK (JP) 2003-07-16 CN disclosed
EP-0894342-A1 GEOMETRICALLY ENHANCED MAGNETORESISTANCE IN TRILAYER TUNNEL JUNCTIONS MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 1999-02-03 EP disclosed
US-5835314-A Tunnel junction device for storage and switching of signals MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 1998-11-10 US disclosed
WO-1997039488-A1 GEOMETRICALLY ENHANCED MAGNETORESISTANCE IN TRILAYER TUNNEL JUNCTIONS MASSACHUSETTS INSTITUTE OF TECHNOLOGY (US) 1997-10-23 WO disclosed