SCHEMBL29929124

SCHEMBL29929124

CSCC[C@H](NC(=O)[C@H](CC(C)C)NC(=O)[C@H](CCCNC(=N)N)NC(=O)[C@H](CO)NC(=O)[C@H](CS)NC(=O)[C@H](CCCCN)NC(=O)[C@H](C)NC(=O)CNC(=O)[C@H](CCCCN)NC(=O)CNC(=O)[C@H](CCCCN)NC(=O)[C@@H](N)CS)C(=O)N[C@@H](Cc1ccc(O)cc1)C(=O)N[C@@H](CC(=O)O)C(=O)N[C@H](CS)C(=O)N[C@@H](CS)C(=O)N[C@H](C(=O)NCC(=O)N[C@@H](CO)C(=O)N[C@@H](CS)C(=O)N[C@@H](CCCNC(=N)N)C(=O)N[C@@H](CO)C(=O)NCC(=O)N[C@@H](CCCCN)C(=O)N[C@@H](CS)C(N)=O)[C@@H](C)O

nearest known ligand 0.59

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
▸ TFPI P10646 1/20 0.59
▸ IL23R Q5VWK5 3/20 0.57
▸ OPRM1 P35372 1/20 0.56
▸ OPRD1 P41143 1/20 0.56
▸ OPRK1 P41145 1/20 0.56
▸ OPRL1 P41146 2/20 0.55
▸ GLP1R P43220 2/20 0.54
▸ GCGR P47871 1/20 0.54
▸ GIPR P48546 1/20 0.54
▸ CCKBR P32239 1/20 0.54
▸ KEAP1 Q14145 1/20 0.54
▸ CALCR P30988 2/20 0.53

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30800826 1.00 TFPI (0.59) TFPIIL23ROPRM1OPRD1OPRK1
SCHEMBL29541665 1.00 TFPI (0.59) TFPIIL23ROPRM1OPRD1OPRK1
SCHEMBL30767165 0.97 TFPI (0.57) TFPIIL23ROPRM1OPRD1OPRK1
SCHEMBL28216597 0.93 TFPI (0.58) TFPIIL23ROPRL1GLP1RGCGR
SCHEMBL30618037 0.88 TFPI (0.61) TFPIGLP1RCCKBRCALCR
SCHEMBL15186094 0.87 GLP1R (0.67) TFPIIL23ROPRM1OPRD1OPRK1
SCHEMBL31678895 0.87 TFPI (0.60) TFPIOPRL1GLP1RGCGRGIPR
SCHEMBL15185980 0.87 GLP1R (0.69) TFPIIL23RGLP1RGCGRGIPR
SCHEMBL29701273 0.86 TFPI (0.74) TFPIIL23RGLP1RGCGRGIPR
SCHEMBL15186066 0.86 GLP1R (0.63) TFPIIL23ROPRM1OPRD1OPRK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-112639174-B Method for growing semi-insulating silicon carbide single crystal ingot and apparatus for growing silicon carbide single crystal ingot 赛尼克公司 2022-09-20 — — CN disclosed
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