SCHEMBL302543

SCHEMBL302543

CCO[SiH](C)N(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10407567 0.73
SCHEMBL11022151 0.71
SCHEMBL9463586 0.71
SCHEMBL15785136 0.71
SCHEMBL16668729 0.69
SCHEMBL17975848 0.69
SCHEMBL9065265 0.68
Trimethylammonium SCHEMBL4265011 0.67
SCHEMBL35695 0.65
SCHEMBL2527069 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 58 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117779030-B Silicon crystal tank liquid and environment-friendly metal surface treatment process 开平和盟环保科技有限公司 2024-05-17 CN claimed
CN-117779030-A Silicon crystal tank liquid and environment-friendly metal surface treatment process 开平和盟环保科技有限公司 2024-03-29 CN claimed
EP-1279072-B1 OZONE-ENHANCED SILYLATION PROCESS TO INCREASE ETCH RESISTANCE OF ULTRA THIN RESISTS ADVANCED MICRO DEVICES INC (US) 2004-10-06 EP claimed
US-6746822-B1 DEPOSITING ON SEMICONDUCTOR SUBSTRATE LIGHT-DEGRADABLE SURFACE COUPLING AGENT WHICH LOSES ADHESION PROPERTIES ON EXPOSURE TO LIGHT, DEPOSITING RESIST, IRRADIATING PORTIONS OF RESIST, AT LEAST PARTIALLY DECOMPOSING COUPLER, DEVELOPING RESIST ADVANCED MICRO DEVICES, INC. 2004-06-08 US claimed
US-20040033445-A1 Method of forming a photoresist pattern and method for patterning a layer using a photoresist SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-19 US claimed
US-6645702-B1 Treat resist surface to prevent pattern collapse ADVANCED MICRO DEVICES, INC. 2003-11-11 US claimed
EP-1279072-A2 UV-ENHANCED SILYLATION PROCESS TO INCREASE ETCH RESISTANCE OF ULTRA THIN RESISTS ADVANCED MICRO DEVICES, INC. (US) 2003-01-29 EP claimed
US-6451512-B1 UV-enhanced silylation process to increase etch resistance of ultra thin resists ADVANCED MICRO DEVICES, INC. 2002-09-17 US claimed
WO-2001084599-A2 UV-ENHANCED SILYLATION PROCESS TO INCREASE ETCH RESISTANCE OF ULTRA THIN RESISTS ADVANCED MICRO DEVICES, INC. (US) 2001-11-08 WO claimed
US-5707783-A Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging COMPLEX FLUID SYSTEMS, INC. (US) 1998-01-13 US claimed
US-4491669-A Mixed alkoxyaminosilanes, methods of making same and vulcanizing silicons prepared therefrom PETRARCH SYSTEMS INC. (US) 1985-01-01 US claimed
CN-117779030-B Silicon crystal tank liquid and environment-friendly metal surface treatment process 开平和盟环保科技有限公司 2024-05-17 CN disclosed
CN-117779030-A Silicon crystal tank liquid and environment-friendly metal surface treatment process 开平和盟环保科技有限公司 2024-03-29 CN disclosed
CN-107400877-B Ground state hydrogen radical source for chemical vapor deposition of silicon-containing carbon films 朗姆研究公司 2020-06-30 CN disclosed
EP-2145929-B1 Method for manufacturing redispersible, surface-modified silicon dioxide particles EVONIK OPERATIONS GMBH (DE) 2020-06-24 EP disclosed
US-20040033445-A1 Method of forming a photoresist pattern and method for patterning a layer using a photoresist SAMSUNG ELECTRONICS CO., LTD. (KR) 2004-02-19 US disclosed
US-6645702-B1 Treat resist surface to prevent pattern collapse ADVANCED MICRO DEVICES, INC. 2003-11-11 US disclosed
US-6451512-B1 UV-enhanced silylation process to increase etch resistance of ultra thin resists ADVANCED MICRO DEVICES, INC. 2002-09-17 US disclosed
US-5707783-A Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging COMPLEX FLUID SYSTEMS, INC. (US) 1998-01-13 US disclosed
US-4491669-A Mixed alkoxyaminosilanes, methods of making same and vulcanizing silicons prepared therefrom PETRARCH SYSTEMS INC. (US) 1985-01-01 US disclosed