⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16423972 | 0.81 | — | — | |
| SCHEMBL8199424 | 0.73 | — | — | |
| SCHEMBL43451 | 0.73 | — | — | |
| SCHEMBL15511352 | 0.70 | — | — | |
| SCHEMBL183404 | 0.70 | — | — | |
| SCHEMBL646233 | 0.69 | — | — | |
| SCHEMBL2589312 | 0.69 | — | — | |
| Carbon Monoxide SCHEMBL10884406 | 0.65 | — | — | |
| SCHEMBL5034113 | 0.65 | — | — | |
| SCHEMBL16424121 | 0.62 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 87 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-112420477-B | High-gain and low-luminescence ALD-MCP and preparation method and application thereof | 北方夜视技术股份有限公司 | 2022-09-06 | — | — | CN | claimed |
| CN-112420477-A | High-gain and low-luminescence ALD-MCP and preparation method and application thereof | 北方夜视技术股份有限公司 | 2021-02-26 | — | — | CN | claimed |
| CN-110783281-B | Film packaging assembly of stretchable electronic device and preparation method thereof | 华中科技大学 | 2021-02-05 | — | — | CN | claimed |
| CN-110783281-A | Film packaging assembly of stretchable electronic device and preparation method thereof | 华中科技大学 | 2020-02-11 | — | — | CN | claimed |
| EP-4315395-A1 | ENCAPSULATION LAYER FOR CHALCOGENIDE MATERIAL | Eugenus, Inc. (US) | 2024-02-07 | — | — | EP | disclosed |
| US-11631785-B2 | Group-III nitride laminated substrate and semiconductor light-emitting element | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2023-04-18 | — | — | US | disclosed |
| CN-112420477-B | High-gain and low-luminescence ALD-MCP and preparation method and application thereof | 北方夜视技术股份有限公司 | 2022-09-06 | — | — | CN | disclosed |
| CN-112420477-B | High-gain and low-luminescence ALD-MCP and preparation method and application thereof | 北方夜视技术股份有限公司 | 2022-09-06 | — | — | CN | disclosed |
| US-20210217927-A1 | GROUP-III NITRIDE LAMINATED SUBSTRATE AND SEMICONDUCTOR LIGHT-EMITTING ELEMENT | SCIOCS COMPANY LIMITED (JP) | 2021-07-15 | — | — | US | disclosed |
| CN-112838149-A | Group III nitride laminate substrate and semiconductor light-emitting element | 赛奥科思有限公司 | 2021-05-25 | — | — | CN | disclosed |
| CN-112420477-A | High-gain and low-luminescence ALD-MCP and preparation method and application thereof | 北方夜视技术股份有限公司 | 2021-02-26 | — | — | CN | disclosed |
| CN-112420477-A | High-gain and low-luminescence ALD-MCP and preparation method and application thereof | 北方夜视技术股份有限公司 | 2021-02-26 | — | — | CN | disclosed |
| US-6411636-B1 | Nitride semiconductor laser and method of fabricating the same | PIONEER CORPORATION (JP) | 2002-06-25 | — | — | US | disclosed |
| US-6335218-B1 | Method for fabricating a group III nitride semiconductor device | PIONEER CORPORATION (JP) | 2002-01-01 | — | — | US | disclosed |
| US-20010055324-A1 | Nitride semiconductor laser and method of manufacturing the same | PIONEER CORPORATION (JP) | 2001-12-27 | — | — | US | disclosed |
| US-6329667-B1 | Nitride semiconductor light emitting device and manufacturing method thereof | PIONEER CORPORATION (JP) | 2001-12-11 | — | — | US | disclosed |
| US-6235548-B1 | HEAT TREATMENT; SUPPLYING HYDROCARBON GAS | PIONEER CORPORATION (JP) | 2001-05-22 | — | — | US | disclosed |
| US-6207469-B1 | Method for manufacturing a semiconductor device | PIONEER ELECTRONIC CORPORATION (JP) | 2001-03-27 | — | — | US | disclosed |
| EP-1052705-A1 | Method for fabricating a group III Nitride semiconductor device | Pioneer Corporation (JP) | 2000-11-15 | — | — | EP | disclosed |
| EP-1014520-A1 | Nitride semiconductor laser and method of fabricating the same | Pioneer Corporation (JP) | 2000-06-28 | — | — | EP | disclosed |