⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL52434 | 0.97 | PRSS1 (0.36) | — | |
| SCHEMBL11805630 | 0.97 | PRSS1 (0.36) | — | |
| SCHEMBL4046976 | 0.97 | PRSS1 (0.36) | — | |
| SCHEMBL11803699 | 0.97 | PRSS1 (0.36) | — | |
| SCHEMBL2962078 | 0.97 | PRSS1 (0.36) | — | |
| SCHEMBL19212607 | 0.97 | PRSS1 (0.36) | — | |
| SCHEMBL2954265 | 0.97 | PRSS1 (0.36) | — | |
| SCHEMBL20618128 | 0.97 | PRSS1 (0.36) | — | |
| SCHEMBL20617569 | 0.97 | PRSS1 (0.36) | — | |
| SCHEMBL4046094 | 0.97 | PRSS1 (0.36) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 71 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7105275-B2 | Positive resist composition and method of forming pattern using the same | FUJI PHOTO FILM CO., LTD. (JP) | 2006-09-12 | — | — | US | claimed |
| US-6824956-B2 | ADDITION POLYMER CONTAINING UNITS OF AN ADAMANTYL ESTER HAVING HYDROXY GROUPS | FUJI PHOTO FILM CO., LTD. (JP) | 2004-11-30 | — | — | US | claimed |
| US-6787282-B2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2004-09-07 | — | — | US | claimed |
| US-20030194640-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-10-16 | — | — | US | claimed |
| EP-1338922-A2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2003-08-27 | — | — | EP | claimed |
| US-20030108809-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-06-12 | — | — | US | claimed |
| WO-2024070091-A1 | ONIUM SALT, PHOTOACID GENERATOR, POLYMER, RESIST COMPOSITION, AND METHOD FOR MANUFACTURING DEVICE USING SAID RESIST COMPOSITION | 東洋合成工業株式会社 | 2024-04-04 | — | — | WO | disclosed |
| US-11814498-B2 | Polylactone foams and methods of making the same | NOVOMER, INC. (US) | 2023-11-14 | — | — | US | disclosed |
| US-11814498-B2 | Polylactone foams and methods of making the same | NOVOMER, INC. (US) | 2023-11-14 | — | — | US | disclosed |
| US-20230340266-A1 | SILICON-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | JSR CORPORATION (JP) | 2023-10-26 | — | — | US | disclosed |
| US-20230250238-A9 | SILICON-CONTAINING COMPOSITION AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE | JSR CORPORATION (JP) | 2023-08-10 | — | — | US | disclosed |
| US-20230093664-A1 | SILICON-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE | JSR CORPORATION (JP) | 2023-03-23 | — | — | US | disclosed |
| US-20220403116-A1 | SILICON-CONTAINING COMPOSITION AND METHOD OF PRODUCING SEMICONDUCTOR SUBSTRATE | JSR CORPORATION (JP) | 2022-12-22 | — | — | US | disclosed |
| US-20030194640-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-10-16 | — | — | US | disclosed |
| US-20030162961-A1 | Catalytic carbonylation of three and four membered heterocycles | CORNELL RESEARCH FOUNDATION, INC. | 2003-08-28 | — | — | US | disclosed |
| EP-1338922-A2 | Positive resist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2003-08-27 | — | — | EP | disclosed |
| WO-2003050154-A2 | CATALYTIC CARBONYLATION OF THREE AND FOUR MEMBERED HETEROCYCLES | CORNELL RESEARCH FOUNDATION, INC. (US) | 2003-06-19 | — | — | WO | disclosed |
| US-20030108809-A1 | Positive resist composition | FUJI PHOTO FILM CO., LTD. | 2003-06-12 | — | — | US | disclosed |
| US-6461788-B1 | COMPOUNDS HAVING SPECIFIC CYCLOHEXANELACTONE STRUCTURE FORM POLYMERS HAVING HIGH TRANSPARENCY AT SHORT WAVELENGTH SUCH AS ARGON FLUORIDE EXCIMER LASER, EXCELLENT DRY ETCHING RESISTANCE AND SUBSTRATE ADHERENCE; USEFUL FOR RESISTS | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | disclosed |
| US-6461788-B1 | COMPOUNDS HAVING SPECIFIC CYCLOHEXANELACTONE STRUCTURE FORM POLYMERS HAVING HIGH TRANSPARENCY AT SHORT WAVELENGTH SUCH AS ARGON FLUORIDE EXCIMER LASER, EXCELLENT DRY ETCHING RESISTANCE AND SUBSTRATE ADHERENCE; USEFUL FOR RESISTS | MARUZEN PETROCHEMICAL CO., LTD. (JP) | 2002-10-08 | — | — | US | disclosed |