SCHEMBL3044515

SCHEMBL3044515

COC(=O)N[C@H](C(=O)N1C(c2nc3cc(C#Cc4ccc5c(ccc6nc([C@@H]7CC[C@H](C)N7C(=O)[C@@H](NC(=O)O)C7CCOCC7)[nH]c65)c4)ccc3[nH]2)CC[C@@H]1C)C1CCOCC1

nearest known ligand 0.41

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2280569 1.00 MAPK1 (0.32) MAPK1
SCHEMBL2280411 0.95 MAPK1 (0.33) MAPK1
SCHEMBL2279198 0.95
SCHEMBL19388899 0.93 MAPK1 (0.33) MAPK1
SCHEMBL3053238 0.92
SCHEMBL2284395 0.91 MAPK1 (0.30) MAPK1
SCHEMBL19458469 0.91 MAPK1 (0.30) MAPK1
SCHEMBL15116931 0.90 MAPK1 (0.33) MAPK1
SCHEMBL14563078 0.90 MAPK1 (0.31) MAPK1
SCHEMBL14563076 0.90 MAPK1 (0.31) MAPK1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8808975-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
US-20100310991-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-09 US disclosed
US-7803511-B2 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJIFILM CORPORATION (JP) 2010-09-28 US disclosed
US-7273690-B2 Positive resist composition for immersion exposure and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2007-09-25 US disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-20050186505-A1 Positive resist composition for immersion exposure and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2005-08-25 US disclosed