Morpholine

Morpholine

SCHEMBL3056332

C1COCCN1.CCC#N

nearest known ligand 0.52

Full drug profile on Sugi Atlas →

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.52
KMT2A Q03164 1/20 0.52
KDM4E B2RXH2 1/20 0.52
GAA P10253 1/20 0.52
CYP2C9 P11712 1/20 0.52
ALDH1A1 P00352 1/20 0.45
POLB P06746 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Propionitrile SCHEMBL8759293 0.84
Morpholine SCHEMBL546382 0.81
Morpholine SCHEMBL456806 0.81
Morpholine SCHEMBL7100628 0.79 MEN1 (0.58) MEN1KMT2AKDM4EGAACYP2C9
Morpholine SCHEMBL27799126 0.78 MEN1 (0.65) MEN1KMT2AKDM4EGAACYP2C9
Morpholine SCHEMBL27685879 0.78 MEN1 (0.65) MEN1KMT2AKDM4EGAACYP2C9
Morpholine SCHEMBL11338140 0.78 MEN1 (0.65) MEN1KMT2AKDM4EGAACYP2C9
Morpholine SCHEMBL199473 0.78 MEN1 (0.85) MEN1KMT2AKDM4EGAACYP2C9
Morpholine SCHEMBL3277059 0.78
Morpholine SCHEMBL12986700 0.77 MEN1 (0.55) MEN1KMT2AKDM4EGAACYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8808975-B2 Positive resist composition for immersion exposure and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
US-20100310991-A1 POSITIVE RESIST COMPOSITION FOR IMMERSION EXPOSURE AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-09 US disclosed
US-7803511-B2 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJIFILM CORPORATION (JP) 2010-09-28 US disclosed
US-7273690-B2 Positive resist composition for immersion exposure and method of pattern formation with the same FUJIFILM CORPORATION (JP) 2007-09-25 US disclosed
US-20070042290-A1 resin containing acrylic ester monomers capable of increasing solubility in alkali developer by action of acid, acid generator, aryldicycloalkylsulfonium compounds, and nonionic surfactant; semiconductors, integrated circuits FUJI PHOTO FILM CO., LTD. 2007-02-22 US disclosed
US-20050186505-A1 Positive resist composition for immersion exposure and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2005-08-25 US disclosed