SCHEMBL306226

SCHEMBL306226

B.[Ni].[Re]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Phosphine SCHEMBL3182669 0.87
SCHEMBL5017414 0.87
SCHEMBL354896 0.82
SCHEMBL28329918 0.82
SCHEMBL6824 0.82
SCHEMBL136056 0.82
Phosphine SCHEMBL5015924 0.78
Ammonia Solution, Strong SCHEMBL23227564 0.67
Phosphine SCHEMBL3264789 0.67
SCHEMBL3773035 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-1761534-A Electroless plating solution and method MATTSON TECH INC (US) 2006-04-19 CN claimed
US-20040142114-A1 Electroless plating solution and process MATTSON TECHNOLOGY, INC. 2004-07-22 US claimed
US-8709906-B2 MIM capacitor and associated production method INFINEON TECHNOLOGIES AG (DE) 2014-04-29 US disclosed
US-20120100689-A1 MIM CAPACITOR AND ASSOCIATED PRODUCTION METHOD INFINEON TECHNOLOGIES AG (DE) 2012-04-26 US disclosed
US-8093637-B2 MIM capacitor and associated production method INFINEON TECHNOLOGIES AG (DE) 2012-01-10 US disclosed
US-20080197497-A1 BARRIER FOR USE IN 3-D INTEGRATION OF CIRCUITS FREESCALE SEMICONDUCTOR, INC. (US) 2008-08-21 US disclosed
CN-100408202-C Electroless plating solution and process MATTSON TECH INC (US) 2008-08-06 CN disclosed
US-7378339-B2 Barrier for use in 3-D integration of circuits FREESCALE SEMICONDUCTOR, INC. (US) 2008-05-27 US disclosed
WO-2007130731-A2 BARRIER FOR USE IN 3-D INTEGRATION OF CIRCUITS FREESCALE SEMICONDUCTOR INC. (US) 2007-11-15 WO disclosed
US-20070231950-A1 BARRIER FOR USE IN 3-D INTEGRATION OF CIRCUITS NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) 2007-10-04 US disclosed
US-20070111431-A1 MIM capacitor and associated production method INFINEON TECHNOLOGIES AG (DE) 2007-05-17 US disclosed
CN-1761534-A Electroless plating solution and method MATTSON TECH INC (US) 2006-04-19 CN disclosed
US-6797312-B2 DOES NOT REQUIRE THE USE OF A CATALYST, COMPRISING A FIRST REDUCING AGENT, A SECOND REDUCING AGENT, A PH ADJUSTING AGENT, A FIRST METAL SOURCE, AND A SECOND METAL SOURCE MATTSON TECHNOLOGY, INC. 2004-09-28 US disclosed
WO-2004067192-A1 ELECTROLESS PLATING SOLUTION AND PROCESS MATTSON TECHNOLOGY, INC. (US) 2004-08-12 WO disclosed
US-20040142114-A1 Electroless plating solution and process MATTSON TECHNOLOGY, INC. 2004-07-22 US disclosed
EP-0197611-A2 Conversion of oxygen-containing polyamines UNION CARBIDE CORPORATION (US) 1986-10-15 EP disclosed
US-4123462-A CATALYST FOR SELECTIVELY CONVERTING ALKANES TO ALKYLAMINES UNION CARBIDE CORPORATION (US) 1978-10-31 US disclosed
US-4111840-A NICKEL-RHENIUM HYDROGENATION CATALYST AND METHODS OF PREPARING SAME AND USING SAME UNION CARBIDE CORPORATION (US) 1978-09-05 US disclosed