Ammonia Solution, Strong

Ammonia Solution, Strong

SCHEMBL3084900

CC(N)OC(C)O.N

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL152847 0.97
Water SCHEMBL16103958 0.93
SCHEMBL9700127 0.81
SCHEMBL2066531 0.79
Ammonia Solution, Strong SCHEMBL28208580 0.78
Ammonia Solution, Strong SCHEMBL845587 0.74
SCHEMBL55913 0.73
SCHEMBL8330698 0.73
SCHEMBL40263 0.73
SCHEMBL10725713 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7795685-B2 Method of manufacturing a thin film transistor substrate and stripping composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-09-14 US claimed
US-20080039354-A1 METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE AND STRIPPING COMPOSITION SAMSUNG ELECTRONICS CO., LTD (KR) 2008-02-14 US claimed
US-7300827-B2 Method of manufacturing a thin film transistor substrate and stripping composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-11-27 US claimed
US-20060046365-A1 Method of manufacturing a thin film transistor substrate and stripping composition TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. (CN) 2006-03-02 US claimed
US-7795685-B2 Method of manufacturing a thin film transistor substrate and stripping composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-09-14 US disclosed
US-7566596-B2 Method of manufacturing a thin film transistor substrate and stripping composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-07-28 US disclosed
US-20080096333-A1 METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE AND STRIPPING COMPOSITION SAMSUNG ELECTRONICS CO., LTD (KR) 2008-04-24 US disclosed
US-20080039354-A1 METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE AND STRIPPING COMPOSITION SAMSUNG ELECTRONICS CO., LTD (KR) 2008-02-14 US disclosed
US-7300827-B2 Method of manufacturing a thin film transistor substrate and stripping composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-11-27 US disclosed
US-20060046365-A1 Method of manufacturing a thin film transistor substrate and stripping composition TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. (CN) 2006-03-02 US disclosed
EP-0656405-B1 Aqueous stripping compositions containing a hydroxylamine and an alkanolamine and use thereof AIR PROD & CHEM (US) 2004-07-14 EP disclosed
EP-0656405-A2 Aqueous stripping compositions containing a hydroxylamine and an alkanolamine and use thereof ASHLAND OIL, INC. (US) 1995-06-07 EP disclosed