⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10425967 | 0.89 | — | — | |
| SCHEMBL387227 | 0.87 | — | — | |
| SCHEMBL1696952 | 0.87 | — | — | |
| SCHEMBL7638450 | 0.87 | — | — | |
| SCHEMBL1535961 | 0.87 | — | — | |
| SCHEMBL10855904 | 0.82 | — | — | |
| Water SCHEMBL23928443 | 0.75 | — | — | |
| SCHEMBL2838088 | 0.75 | — | — | |
| SCHEMBL6759414 | 0.75 | — | — | |
| SCHEMBL2531334 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-4022678-A1 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON PLATE | Micron Technology, INC. (US) | 2022-07-06 | — | — | EP | claimed |
| EP-3903349-A1 | MEMORY DEVICE HAVING SHARED READ/WRITE DATA LINE FOR 2-TRANSISTOR VERTICAL MEMORY CELL | Micron Technology, Inc. (US) | 2021-11-03 | — | — | EP | claimed |
| WO-2021041544-A1 | MEMORY DEVICE HAVING 2-TRANSISTOR VERTICAL MEMORY CELL AND A COMMON PLAT | MICRON TECHNOLOGY, INC. (US) | 2021-03-04 | — | — | WO | claimed |
| CN-118581460-A | Aluminum sacrificial anode for cathodic protection of seawater cooling system and preparation method | 中核核电运行管理有限公司 | 2024-09-03 | — | — | CN | disclosed |
| CN-217632378-U | Shaft corrosion and scale inhibition device | 李宁 | 2022-10-21 | — | — | CN | disclosed |
| US-20100006837-A1 | COMPOSITION FOR OXIDE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR USING THE COMPOSITION AND METHOD OF FABRICATING THE TRANSISTOR | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) | 2010-01-14 | — | — | US | disclosed |