⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31302763 | 0.69 | — | — | |
| SCHEMBL31302758 | 0.69 | — | — | |
| SCHEMBL2268796 | 0.64 | — | — | |
| SCHEMBL31302803 | 0.57 | — | — | |
| SCHEMBL5253 | 0.56 | — | — | |
| SCHEMBL3944358 | 0.56 | — | — | |
| SCHEMBL2378358 | 0.56 | — | — | |
| Ammonia Solution, Strong SCHEMBL23674462 | 0.53 | — | — | |
| SCHEMBL769735 | 0.53 | — | — | |
| SCHEMBL15091890 | 0.53 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6743737-B2 | FORMING INTEGRATED CIRCUITS; PLASMA VAPOR DEPOSITION | APPLIED MATERIALS, INC. | 2004-06-01 | — | — | US | claimed |
| US-20030054667-A1 | Method of improving moisture resistance of low dielectric constant films | APPLIED MATERIALS, INC. | 2003-03-20 | — | — | US | claimed |
| US-6448187-B2 | DEPOSITING A SILICON OXIDE FILM BY OXIDATION OF SILICON COMPOUND, EXPOSING TO WATER OR A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE AND CURING | APPLIED MATERIALS, INC. | 2002-09-10 | — | — | US | claimed |
| US-20010026849-A1 | Method of improving moisture resistance of low dielectric constant films | APPLIED MATERIALS, INC. | 2001-10-04 | — | — | US | claimed |
| US-6245690-B1 | EXPOSING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED FILM OF OXIDIZED ORGANOSILICON COMPOUND TO A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE PRIOR TO THERMALLY CURING TO CONTROL CARBON CONTENT IN DEPOSITED FILM | APPLIED MATERIALS, INC. | 2001-06-12 | — | — | US | claimed |
| US-7825042-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2010-11-02 | — | — | US | disclosed |
| US-20100081291-A1 | Very Low Dielectric Constant Plasma-Enhanced CVD Films | APPLIED MATERIALS, INC. (US) | 2010-04-01 | — | — | US | disclosed |
| US-7633163-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2009-12-15 | — | — | US | disclosed |
| US-7611996-B2 | Multi-stage curing of low K nano-porous films | APPLIED MATERIALS, INC. (US) | 2009-11-03 | — | — | US | disclosed |
| US-7601631-B2 | Very low dielectric constant plasma-enhanced CVD films | APPPLIED MATERIALS, INC. (US) | 2009-10-13 | — | — | US | disclosed |
| US-7547643-B2 | Techniques promoting adhesion of porous low K film to underlying barrier layer | APPLIED MATERIALS, INC. (US) | 2009-06-16 | — | — | US | disclosed |
| US-7501354-B2 | Formation of low K material utilizing process having readily cleaned by-products | APPLIED MATERIALS, INC. (US) | 2009-03-10 | — | — | US | disclosed |
| US-6541367-B1 | Plasma vapor deposition; oxidation of organosilicon compound | APPLIED MATERIALS, INC. | 2003-04-01 | — | — | US | disclosed |
| US-20030054667-A1 | Method of improving moisture resistance of low dielectric constant films | APPLIED MATERIALS, INC. | 2003-03-20 | — | — | US | disclosed |
| US-20020197849-A1 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. | 2002-12-26 | — | — | US | disclosed |
| US-20020142585-A1 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. | 2002-10-03 | — | — | US | disclosed |
| US-6448187-B2 | DEPOSITING A SILICON OXIDE FILM BY OXIDATION OF SILICON COMPOUND, EXPOSING TO WATER OR A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE AND CURING | APPLIED MATERIALS, INC. | 2002-09-10 | — | — | US | disclosed |
| US-20010026849-A1 | Method of improving moisture resistance of low dielectric constant films | APPLIED MATERIALS, INC. | 2001-10-04 | — | — | US | disclosed |
| EP-1119035-A2 | Method for depositing a low dielectric constant film | Applied Materials, Inc. (US) | 2001-07-25 | — | — | EP | disclosed |
| US-6245690-B1 | EXPOSING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED FILM OF OXIDIZED ORGANOSILICON COMPOUND TO A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE PRIOR TO THERMALLY CURING TO CONTROL CARBON CONTENT IN DEPOSITED FILM | APPLIED MATERIALS, INC. | 2001-06-12 | — | — | US | disclosed |