⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL5413530 | 0.86 | — | — | |
| SCHEMBL5413438 | 0.86 | — | — | |
| SCHEMBL175256 | 0.81 | — | — | |
| SCHEMBL5413000 | 0.75 | — | — | |
| SCHEMBL8637593 | 0.73 | — | — | |
| SCHEMBL8640330 | 0.73 | — | — | |
| SCHEMBL7623707 | 0.73 | — | — | |
| SCHEMBL16566920 | 0.71 | — | — | |
| SCHEMBL1639959 | 0.69 | APP (0.37) | — | |
| SCHEMBL18427889 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10323182-B2 | Nanocrystal-metal oxide composite, methods of manufacture thereof and articles comprising the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-06-18 | — | — | US | claimed |
| EP-2034002-B1 | Nanoncrystal-metal oxide composites and preparation method thereof | SAMSUNG ELECTRONICS CO LTD (KR) | 2013-07-17 | — | — | EP | claimed |
| US-8092719-B2 | Nanocrystal-metal oxide composites and preparation method thereof | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-01-10 | — | — | US | claimed |
| US-20100059743-A1 | NANOCRYSTAL-METAL OXIDE COMPOSITE, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-03-11 | — | — | US | claimed |
| EP-2034002-A2 | Nanoncrystal-metal oxide composites and preparation method thereof | Samsung Electronics Co., Ltd. (KR) | 2009-03-11 | — | — | EP | claimed |
| US-20090058264-A1 | NANOCRYSTAL-METAL OXIDE COMPOSITES AND PREPARATION METHOD THEREOF | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-03-05 | — | — | US | claimed |
| US-10323182-B2 | Nanocrystal-metal oxide composite, methods of manufacture thereof and articles comprising the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-06-18 | — | — | US | disclosed |
| US-8968458-B2 | Composition for resist underlayer film and process for producing same | JSR CORPORATION (JP) | 2015-03-03 | — | — | US | disclosed |
| US-8808446-B2 | Composition for resist underlayer film and process for producing same | JSR CORPORATION (JP) | 2014-08-19 | — | — | US | disclosed |
| EP-2034002-B1 | Nanoncrystal-metal oxide composites and preparation method thereof | SAMSUNG ELECTRONICS CO LTD (KR) | 2013-07-17 | — | — | EP | disclosed |
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | disclosed |
| US-8092719-B2 | Nanocrystal-metal oxide composites and preparation method thereof | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-01-10 | — | — | US | disclosed |
| US-20110101489-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-05-05 | — | — | US | disclosed |
| EP-1122746-B1 | Composition for film formation and insulating film | JSR CORP (JP) | 2004-09-22 | — | — | EP | disclosed |
| US-6468589-B2 | A HEAT-CURED POLYETHER BASED ON A 9,9-BIS(P-HYDROXYPHENYL)-FLUORENE HAVING AT LEAST ONE ALKYL SUBSTITUENT AND A DIHYDROXY AROMATIC COMONOMER; LOW DIELECTRIC PROTECTIVE COATINGS; HEAT RESISTANCE; NONCRACKING | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-20010012870-A1 | Composition for film formation and insulating film | JSR CORPORATION (JP) | 2001-08-09 | — | — | US | disclosed |
| EP-1122746-A1 | Composition for film formation and insulating film | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| EP-0641820-B1 | Organosilicon polymer and process for the preparation thereof | TOSHIBA SILICONE (JP) | 1998-08-12 | — | — | EP | disclosed |
| US-5489662-A | Process for the preparation of organosilicon polymer | TOSHIBA SILICONE CO., LTD. (JP) | 1996-02-06 | — | — | US | disclosed |
| EP-0641820-A1 | Process for the preparation of organosilicon polymer | TOSHIBA SILICONE CO., LTD. (JP) | 1995-03-08 | — | — | EP | disclosed |