⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL20658156 | 0.87 | — | — | |
| SCHEMBL3958719 | 0.86 | — | — | |
| SCHEMBL175186 | 0.84 | — | — | |
| SCHEMBL8637593 | 0.84 | — | — | |
| SCHEMBL8640330 | 0.84 | — | — | |
| SCHEMBL17633756 | 0.82 | — | — | |
| SCHEMBL13231944 | 0.82 | — | — | |
| SCHEMBL1271021 | 0.79 | — | — | |
| SCHEMBL3868948 | 0.79 | — | — | |
| SCHEMBL4408233 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 83 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119524645-A | Preparation method and application of organic silicon/MOF-303 mixed matrix membrane | 中国石油化工股份有限公司 | 2025-02-28 | — | — | CN | claimed |
| CN-119455694-A | Polysilsesquioxane/polyether-ether-ketone composite membrane, preparation method thereof and application thereof in separation of organic mixed solvent | 常州大学 | 2025-02-18 | — | — | CN | claimed |
| CN-119186283-A | Reduced graphene oxide and organic silicon composite film and preparation method thereof | 中集安瑞科工程科技有限公司 | 2024-12-27 | — | — | CN | claimed |
| CN-117599620-A | Composite silicon film for separating organic mixed solvent and preparation method and application thereof | 常州大学 | 2024-02-27 | — | — | CN | claimed |
| CN-117018876-A | Preparation method of graphene oxide reverse osmosis membrane and graphene oxide reverse osmosis membrane | 中集安瑞科工程科技有限公司 | 2023-11-10 | — | — | CN | claimed |
| CN-115025635-B | Preparation method of bridge organic silicon/GO composite nanofiltration membrane | 常州大学 | 2023-08-18 | — | — | CN | claimed |
| CN-115445449-A | Preparation method and application of high-permeability hybrid silicon film | 常州大学 | 2022-12-09 | — | — | CN | claimed |
| CN-115025635-A | Preparation method of bridge organic silicon/GO composite nanofiltration membrane | 常州大学 | 2022-09-09 | — | — | CN | claimed |
| CN-113648855-B | For separating CO 2 /N 2 Method for preparing organic silicon film | 常州大学 | 2022-08-02 | — | — | CN | claimed |
| US-10323182-B2 | Nanocrystal-metal oxide composite, methods of manufacture thereof and articles comprising the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-06-18 | — | — | US | claimed |
| US-9657174-B2 | Siloxane monomer, encapsulant composition, encapsulant and electronic device | CHEIL INDUSTRIES, INC. (KR) | 2017-05-23 | — | — | US | claimed |
| US-20150322096-A1 | SILOXANE MONOMER, ENCAPSULANT COMPOSITION, ENCAPSULANT AND ELECTRONIC DEVICE | CHEIL INDUSTRIES INC. (KR) | 2015-11-12 | — | — | US | claimed |
| EP-2034002-B1 | Nanoncrystal-metal oxide composites and preparation method thereof | SAMSUNG ELECTRONICS CO LTD (KR) | 2013-07-17 | — | — | EP | claimed |
| US-8455605-B2 | Resin composition for transparent encapsulation material and electronic device formed using the same | CHEIL INDUSTRIES, INC. (KR) | 2013-06-04 | — | — | US | claimed |
| US-20120270998-A1 | RESIN COMPOSITION FOR TRANSPARENT ENCAPSULATION MATERIAL AND ELECTRONIC DEVICE FORMED USING THE SAME | CHEIL INDUSTRIES, INC. (KR) | 2012-10-25 | — | — | US | claimed |
| US-8092719-B2 | Nanocrystal-metal oxide composites and preparation method thereof | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-01-10 | — | — | US | claimed |
| US-20100059743-A1 | NANOCRYSTAL-METAL OXIDE COMPOSITE, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-03-11 | — | — | US | claimed |
| EP-2034002-A2 | Nanoncrystal-metal oxide composites and preparation method thereof | Samsung Electronics Co., Ltd. (KR) | 2009-03-11 | — | — | EP | claimed |
| US-20090058264-A1 | NANOCRYSTAL-METAL OXIDE COMPOSITES AND PREPARATION METHOD THEREOF | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-03-05 | — | — | US | claimed |
| US-20260027514-A1 | GAS ISOLATION METHOD | DAIKIN INDUSTRIES, LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| US-20260027515-A1 | GAS SEPARATION METHOD | DAIKIN INDUSTRIES, LTD. (JP) | 2026-01-29 | — | — | US | disclosed |
| EP-4674511-A1 | GAS ISOLATION METHOD | Daikin Industries, Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| US-20250296907-A1 | METHOD FOR OBTAINING ACETOIN | LESAFFRE ET COMPAGNIE (FR) | 2025-09-25 | — | — | US | disclosed |
| CN-119524645-A | Preparation method and application of organic silicon/MOF-303 mixed matrix membrane | 中国石油化工股份有限公司 | 2025-02-28 | — | — | CN | disclosed |
| EP-4508024-A1 | METHOD FOR OBTAINING ACETOIN | Lesaffre et Compagnie (FR) | 2025-02-19 | — | — | EP | disclosed |
| CN-119455694-A | Polysilsesquioxane/polyether-ether-ketone composite membrane, preparation method thereof and application thereof in separation of organic mixed solvent | 常州大学 | 2025-02-18 | — | — | CN | disclosed |
| CN-119186283-A | Reduced graphene oxide and organic silicon composite film and preparation method thereof | 中集安瑞科工程科技有限公司 | 2024-12-27 | — | — | CN | disclosed |
| CN-119156368-A | Method for acquiring acetoin | 乐斯福公司 | 2024-12-17 | — | — | CN | disclosed |
| EP-4467228-A1 | GAS SEPARATION METHOD | Daikin Industries, Ltd. (JP) | 2024-11-27 | — | — | EP | disclosed |
| CN-115445449-B | Preparation method and application of high-permeability hybrid silicon film | 常州大学 | 2024-10-15 | — | — | CN | disclosed |
| WO-2024204348-A1 | GAS ISOLATION METHOD | ダイキン工業株式会社 | 2024-10-03 | — | — | WO | disclosed |
| WO-2024204347-A1 | GAS SEPARATION METHOD | ダイキン工業株式会社 | 2024-10-03 | — | — | WO | disclosed |
| CN-117599620-A | Composite silicon film for separating organic mixed solvent and preparation method and application thereof | 常州大学 | 2024-02-27 | — | — | CN | disclosed |
| CN-117018876-A | Preparation method of graphene oxide reverse osmosis membrane and graphene oxide reverse osmosis membrane | 中集安瑞科工程科技有限公司 | 2023-11-10 | — | — | CN | disclosed |
| US-11795243-B2 | End group functionalization agents for polydiene | IOWA STATE UNIVERSITY RESEARCH FOUNDATION, INC. (US) | 2023-10-24 | — | — | US | disclosed |
| WO-2023198993-A1 | METHOD FOR OBTAINING ACETOIN | LESAFFRE ET COMPAGNIE (FR) | 2023-10-19 | — | — | WO | disclosed |
| CN-115025635-B | Preparation method of bridge organic silicon/GO composite nanofiltration membrane | 常州大学 | 2023-08-18 | — | — | CN | disclosed |
| EP-4067542-B1 | METHOD FOR THE PREPARATION OF A SOL FOR THE PREPARATION OF HYBRID ORGANOSILANE FIBERS BY ELECTROSTATIC SPINNING, THE SOL PREPARED BY THIS METHOD AND HYBRID ORGANOSILANE FIBERS PREPARED BY THE ELECTROSTATIC SPINNING OF THIS SOL | UNIV V LIBERCI TECCH (CZ) | 2023-07-26 | — | — | EP | disclosed |
| CN-115445449-A | Preparation method and application of high-permeability hybrid silicon film | 常州大学 | 2022-12-09 | — | — | CN | disclosed |
| CN-115025635-A | Preparation method of bridge organic silicon/GO composite nanofiltration membrane | 常州大学 | 2022-09-09 | — | — | CN | disclosed |
| CN-113648855-B | For separating CO 2 /N 2 Method for preparing organic silicon film | 常州大学 | 2022-08-02 | — | — | CN | disclosed |
| CN-113648855-B | For separating CO 2 /N 2 Method for preparing organic silicon film | 常州大学 | 2022-08-02 | — | — | CN | disclosed |
| US-20220041588-A1 | SUBSTITUTED IMIDAZO[1,2-A]PYRIDINE AND [1,2,4]TRIAZOLO[1,5-A]PYRIDINE COMPOUNDS AS RET KINASE INHIBITORS | FOCHON BIOSCIENCES, LTD. (CN) | 2022-02-10 | — | — | US | disclosed |
| US-20210171672-A1 | END GROUP FUNCTIONALIZATION AGENTS FOR POLYDIENE | UNIV IOWA STATE RES FOUND INC (US) | 2021-06-10 | — | — | US | disclosed |
| US-10919989-B2 | End group functionalization agents for polydiene | IOWA STATE UNIVERSITY RESEARCH FOUNDATION, INC. (US) | 2021-02-16 | — | — | US | disclosed |
| US-10711075-B2 | Method of preparing rubber composition including syndiotactic 1,2-polybutadiene | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2020-07-14 | — | — | US | disclosed |
| US-10323182-B2 | Nanocrystal-metal oxide composite, methods of manufacture thereof and articles comprising the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-06-18 | — | — | US | disclosed |
| US-20190119409-A1 | END GROUP FUNCTIONALIZATION AGENTS FOR POLYDIENE | IOWA STATE UNIVERSITY RESEARCH FOUNDATION, INC. | 2019-04-25 | — | — | US | disclosed |
| US-20190023815-A1 | METHOD OF PREPARING RUBBER COMPOSITION INCLUDING SYNDIOTACTIC 1,2-POLYBUTADIENE | KOREA KUMHO PETROCHEMICAL CO., LTD. (KR) | 2019-01-24 | — | — | US | disclosed |
| US-9657174-B2 | Siloxane monomer, encapsulant composition, encapsulant and electronic device | CHEIL INDUSTRIES, INC. (KR) | 2017-05-23 | — | — | US | disclosed |
| CN-102695770-B | For packaged material light-transmissive resin and comprise its electronic installation | CHEIL INDUSTRIES INC. (KR) | 2016-04-06 | — | — | CN | disclosed |
| US-20150322096-A1 | SILOXANE MONOMER, ENCAPSULANT COMPOSITION, ENCAPSULANT AND ELECTRONIC DEVICE | CHEIL INDUSTRIES INC. (KR) | 2015-11-12 | — | — | US | disclosed |
| EP-2034002-B1 | Nanoncrystal-metal oxide composites and preparation method thereof | SAMSUNG ELECTRONICS CO LTD (KR) | 2013-07-17 | — | — | EP | disclosed |
| US-8455605-B2 | Resin composition for transparent encapsulation material and electronic device formed using the same | CHEIL INDUSTRIES, INC. (KR) | 2013-06-04 | — | — | US | disclosed |
| US-20120270998-A1 | RESIN COMPOSITION FOR TRANSPARENT ENCAPSULATION MATERIAL AND ELECTRONIC DEVICE FORMED USING THE SAME | CHEIL INDUSTRIES, INC. (KR) | 2012-10-25 | — | — | US | disclosed |
| CN-102695770-A | Light-transmitting resin for an encapsulating material and electronic device comprising same | CHEIL IND INC | 2012-09-26 | — | — | CN | disclosed |
| US-8101236-B2 | Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-01-24 | — | — | US | disclosed |
| US-8092719-B2 | Nanocrystal-metal oxide composites and preparation method thereof | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2012-01-10 | — | — | US | disclosed |
| US-7999356-B2 | Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2011-08-16 | — | — | US | disclosed |
| US-7999356-B2 | Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2011-08-16 | — | — | US | disclosed |
| US-20110101489-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-05-05 | — | — | US | disclosed |
| US-20110042789-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND METHOD FOR PRODUCTION OF THE SILICON-CONTAINING INSULATING FILM | JSR CORPORATION (JP) | 2011-02-24 | — | — | US | disclosed |
| US-7892648-B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2011-02-22 | — | — | US | disclosed |
| EP-2264219-A1 | MATERIAL FOR CHEMICAL VAPOR DEPOSITION, SILICON-CONTAINING INSULATING FILM AND PROCESS FOR PRODUCTION THEREOF | JSR Corporation (JP) | 2010-12-22 | — | — | EP | disclosed |
| US-20100072581-A1 | COMPOSITION FOR FILM FORMATION, INSULATING FILM, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE SEMICONDUCTOR DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-03-25 | — | — | US | disclosed |
| US-20100072581-A1 | COMPOSITION FOR FILM FORMATION, INSULATING FILM, SEMICONDUCTOR DEVICE, AND PROCESS FOR PRODUCING THE SEMICONDUCTOR DEVICE | KABUSHIKI KAISHA TOSHIBA (JP) | 2010-03-25 | — | — | US | disclosed |
| US-20100059743-A1 | NANOCRYSTAL-METAL OXIDE COMPOSITE, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2010-03-11 | — | — | US | disclosed |
| US-20090181178-A1 | SiCOH DIELECTRIC MATERIAL WITH IMPROVED TOUGHNESS AND IMPROVED Si-C BONDING, SEMICONDUCTOR DEVICE CONTAINING THE SAME, AND METHOD TO MAKE THE SAME | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-07-16 | — | — | US | disclosed |
| US-7556860-B2 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2009-07-07 | — | — | US | disclosed |
| EP-2034002-A2 | Nanoncrystal-metal oxide composites and preparation method thereof | Samsung Electronics Co., Ltd. (KR) | 2009-03-11 | — | — | EP | disclosed |
| US-20090058264-A1 | NANOCRYSTAL-METAL OXIDE COMPOSITES AND PREPARATION METHOD THEREOF | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2009-03-05 | — | — | US | disclosed |
| US-7479306-B2 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-01-20 | — | — | US | disclosed |
| US-20060216531-A1 | Laminate and method of forming the same, insulating film, and semiconductor device | JSR CORPORATION (JP) | 2006-09-28 | — | — | US | disclosed |
| US-20060165891-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-07-27 | — | — | US | disclosed |
| EP-1679184-A1 | LAMINATE AND METHOD FOR FORMATION THEREOF, INSULATING FILM, SEMICONDUCTOR DEVICE, AND COMPOSITION FOR FORMING FILM | JSR Corporation (JP) | 2006-07-12 | — | — | EP | disclosed |
| US-20050194619-A1 | SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-09-08 | — | — | US | disclosed |
| EP-1122746-B1 | Composition for film formation and insulating film | JSR CORP (JP) | 2004-09-22 | — | — | EP | disclosed |
| US-6468589-B2 | A HEAT-CURED POLYETHER BASED ON A 9,9-BIS(P-HYDROXYPHENYL)-FLUORENE HAVING AT LEAST ONE ALKYL SUBSTITUENT AND A DIHYDROXY AROMATIC COMONOMER; LOW DIELECTRIC PROTECTIVE COATINGS; HEAT RESISTANCE; NONCRACKING | JSR CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-20010012870-A1 | Composition for film formation and insulating film | JSR CORPORATION (JP) | 2001-08-09 | — | — | US | disclosed |
| EP-1122746-A1 | Composition for film formation and insulating film | JSR Corporation (JP) | 2001-08-08 | — | — | EP | disclosed |
| EP-0641820-B1 | Organosilicon polymer and process for the preparation thereof | TOSHIBA SILICONE (JP) | 1998-08-12 | — | — | EP | disclosed |
| US-5489662-A | Process for the preparation of organosilicon polymer | TOSHIBA SILICONE CO., LTD. (JP) | 1996-02-06 | — | — | US | disclosed |
| EP-0641820-A1 | Process for the preparation of organosilicon polymer | TOSHIBA SILICONE CO., LTD. (JP) | 1995-03-08 | — | — | EP | disclosed |
| EP-0641820-A1 | Process for the preparation of organosilicon polymer | TOSHIBA SILICONE CO., LTD. (JP) | 1995-03-08 | — | — | EP | disclosed |