⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14198538 | 0.73 | — | — | |
| SCHEMBL9706874 | 0.73 | — | — | |
| SCHEMBL1772372 | 0.71 | — | — | |
| SCHEMBL152002 | 0.70 | — | — | |
| SCHEMBL23501543 | 0.69 | — | — | |
| SCHEMBL10877829 | 0.67 | — | — | |
| SCHEMBL5446329 | 0.67 | — | — | |
| SCHEMBL1717383 | 0.65 | — | — | |
| Methane SCHEMBL8084960 | 0.65 | — | — | |
| SCHEMBL10400143 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 56 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7399697-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2008-07-15 | — | — | US | claimed |
| US-20050136240-A1 | Very low dielectric constant plasma-enhanced CVD films | MANDAL ROBERT P (US) | 2005-06-23 | — | — | US | claimed |
| US-6890639-B2 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. (US) | 2005-05-10 | — | — | US | claimed |
| US-6596627-B2 | Reacting an organosilicon compound and a non-silicon compound comprising a cyclic ring at conditions sufficient to retain the ring in an intermediate dielectric layer, and converting it to a dispersed void. | APPLIED MATERIALS INC. | 2003-07-22 | — | — | US | claimed |
| US-6541367-B1 | Plasma vapor deposition; oxidation of organosilicon compound | APPLIED MATERIALS, INC. | 2003-04-01 | — | — | US | claimed |
| US-20020197849-A1 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. | 2002-12-26 | — | — | US | claimed |
| EP-1119035-A2 | Method for depositing a low dielectric constant film | Applied Materials, Inc. (US) | 2001-07-25 | — | — | EP | claimed |
| CN-109641482-B | Preparation of cis-1, 4-polydienes having multiple silane functional groups prepared by in situ hydrosilylation of polymer glues | 株式会社普利司通 | 2021-11-05 | — | — | CN | disclosed |
| EP-3507104-A1 | PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BYIN-SITU | Bridgestone Corporation (JP) | 2019-07-10 | — | — | EP | disclosed |
| US-20190186046-A1 | POROUS SURFACE FOR BIOMEDICAL DEVICES | APPLIED MATERIALS INC (US) | 2019-06-20 | — | — | US | disclosed |
| EP-2645375-B1 | Dielectric elastomer on a fluorosilicone basis and method for producing the same | FRAUNHOFER GES FORSCHUNG (DE) | 2019-02-20 | — | — | EP | disclosed |
| US-10167574-B2 | Porous surface for biomedical devices | APPLIED MATERIALS, INC. (US) | 2019-01-01 | — | — | US | disclosed |
| WO-2018045291-A1 | PRODUCTION OF CIS-1,4-POLYDIENES WITH MULTIPLE SILANE FUNCTIONAL GROUPS PREPARED BY IN-SITU HYDROSILYLATION OF POLYMER CEMENT | BRIDGESTONE CORPORATION (JP) | 2018-03-08 | — | — | WO | disclosed |
| US-20040235291-A1 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. | 2004-11-25 | — | — | US | disclosed |
| US-20030211728-A1 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. | 2003-11-13 | — | — | US | disclosed |
| US-6596627-B2 | Reacting an organosilicon compound and a non-silicon compound comprising a cyclic ring at conditions sufficient to retain the ring in an intermediate dielectric layer, and converting it to a dispersed void. | APPLIED MATERIALS INC. | 2003-07-22 | — | — | US | disclosed |
| US-6541367-B1 | Plasma vapor deposition; oxidation of organosilicon compound | APPLIED MATERIALS, INC. | 2003-04-01 | — | — | US | disclosed |
| US-20020197849-A1 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. | 2002-12-26 | — | — | US | disclosed |
| US-20020142585-A1 | Very low dielectric constant plasma-enhanced CVD films | APPLIED MATERIALS, INC. | 2002-10-03 | — | — | US | disclosed |
| EP-1119035-A2 | Method for depositing a low dielectric constant film | Applied Materials, Inc. (US) | 2001-07-25 | — | — | EP | disclosed |