SCHEMBL315677

SCHEMBL315677

[Ge].[Sb]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL30095990 0.82
SCHEMBL29814754 0.82
SCHEMBL31476305 0.82
SCHEMBL10583054 0.82
SCHEMBL7788702 0.82
SCHEMBL9895076 0.82
SCHEMBL30785812 0.82
Selenium SCHEMBL560465 0.82
SCHEMBL2519378 0.82
SCHEMBL30090697 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1404 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260068547-A1 MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE APPLIED MATERIALS, INC. (US) 2026-03-05 US claimed
US-20260068546-A1 MEMRISTIVE COMPUTING SCHEMES IN THE BACK-END-OF-THE-LINE APPLIED MATERIALS, INC. (US) 2026-03-05 US claimed
US-20250359491-A1 PLANARIZATION-LESS PHASE CHANGE MATERIAL SWITCH TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-20 US claimed
US-12431351-B2 Method of forming germanium antimony tellurium film SAMSUNG ELECTRONICS CO., LTD. (KR) 2025-09-30 US claimed
US-20250204287-A1 PHASE CHANGE MATERIAL SWITCH WITH IMPROVED THERMAL CONFINEMENT AND METHODS FOR FORMING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) 2025-06-19 US claimed
CN-120010140-A Optical switching device based on germanium antimony phase change material 西安交通大学 2025-05-16 CN claimed
US-12268103-B2 Phase change material switch with improved thermal confinement and methods for forming the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) 2025-04-01 US claimed
US-20240389483-A1 PHASE CHANGE MATERIAL SWITCH INCLUDING AN IONIC RESISTANCE CHANGE MATERIAL HEATING ELEMENT AND METHODS FOR FORMING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) 2024-11-21 US claimed
CN-118613702-A MEMS pressure sensor with pressure sensing element containing phase change material 长江先进存储产业创新中心有限责任公司 2024-09-06 CN claimed
US-20240276897-A1 PHASE CHANGE MATERIAL SWITCH WITH EFFICIENT HEAT SPREADER AND METHODS FOR FORMING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) 2024-08-15 US claimed
US-20080099326-A1 SPUTTERING OF THERMALLY RESISTIVE MATERIALS INCLUDING METAL CHALCOGENIDES APPLIED METERIALS, INC. (US) 2008-05-01 US claimed
CN-101171696-A Method and structure for peltier-controlled phase change memory IBM (US) 2008-04-30 CN claimed
EP-1878064-A1 METHOD AND STRUCTURE FOR PELTIER-CONTROLLED PHASE CHANGE MEMORY International Business Machines Corporation (US) 2008-01-16 EP claimed
CN-1326138-C Optical information storage medium JINGDIE SCIENCE & TECH CO LTD (CN) 2007-07-11 CN claimed
US-20070037316-A1 Memory cell contact using spacers MICRON TECHNOLOGY, INC. 2007-02-15 US claimed
WO-2006121473-A1 METHOD AND STRUCTURE FOR PELTIER-CONTROLLED PHASE CHANGE MEMORY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-11-16 WO claimed
US-20060249724-A1 Method and structure for Peltier-controlled phase change memory INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-11-09 US claimed
CN-1797768-A Nonvolatile memory and operating method thereof 5WANGHONG ELECTRONIC CO LTD (CN) 2006-07-05 CN claimed
CN-1725331-A Optical information storage medium JINGDIE SCIENCE & TECH CO LTD (CN) 2006-01-25 CN claimed
WO-2001056694-A1 ESTERIFICATION CATALYST COMPOSITIONS ACMA LIMITED (GB) 2001-08-09 WO claimed