SCHEMBL320359

SCHEMBL320359

[In+3].[In+3].[In+3].[In+3].[In+3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Sn+4].[Sn+4].[Sn+4].[Sn+4].[Sn+4]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1689500 0.87
SCHEMBL19281424 0.87
SCHEMBL29375395 0.87
SCHEMBL5148460 0.87
SCHEMBL9079463 0.87
SCHEMBL15599 0.87
SCHEMBL867091 0.75
Zinc Ion SCHEMBL33054 0.75
SCHEMBL21590109 0.75
SCHEMBL15524589 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8455277-B2 Thin film transistor array panel and manufacturing method thereof SAMSUNG DISPLAY CO., LTD. (KR) 2013-06-04 US claimed
US-20120315731-A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-12-13 US claimed
US-8288771-B2 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTONICS CO., LTD. (KR) 2012-10-16 US claimed
US-8207534-B2 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2012-06-26 US claimed
US-20110284857-A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF SAMSUNG DISPLAY CO., LTD. (KR) 2011-11-24 US claimed
US-20090224254-A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. 2009-09-10 US claimed
US-7527992-B2 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-05-05 US claimed
US-20060108587-A1 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-25 US claimed
US-10811583-B2 Light emitting device package and ultraviolet lamp having the same LG INNOTEK CO., LTD. (KR) 2020-10-20 US disclosed
EP-2560205-B1 Light emitting module LG INNOTEK CO LTD (KR) 2020-04-29 EP disclosed
EP-2523230-B1 Light emitting device package and ultraviolet lamp having the same LG INNOTEK CO LTD (KR) 2019-09-18 EP disclosed
US-10270021-B2 Light emitting device package and ultraviolet lamp having the same LG INNOTEK CO., LTD. (KR) 2019-04-23 US disclosed
US-10263210-B2 Organic light-emitting display apparatus and method of manufacturing the same SAMSUNG DISPLAY CO., LTD (KR) 2019-04-16 US disclosed
US-20190019977-A1 ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME SAMSUNG DISPLAY CO LTD (KR) 2019-01-17 US disclosed
EP-2221892-A1 Semiconductor light emitting device and light emitting device package including the same LG Innotek Co., Ltd. (KR) 2010-08-25 EP disclosed
US-20100207153-A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME SUZHOU LEKIN SEMICONDUCTOR CO., LTD. (CN) 2010-08-19 US disclosed
US-20090224254-A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF SAMSUNG ELECTRONICS CO., LTD. 2009-09-10 US disclosed
US-7527992-B2 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2009-05-05 US disclosed
WO-2007074969-A1 GROUP-III NITRIDE-BASED LIGHT EMITTING DEVICE SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-07-05 WO disclosed
US-20060108587-A1 Thin film transistor array panel and manufacturing method thereof SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-25 US disclosed