Hydroxyamine

Hydroxyamine

SCHEMBL3205137

NO.NO.OO

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydroxyamine SCHEMBL3205135 1.00
Hydroxyamine SCHEMBL8155777 0.89
Hydroxyamine SCHEMBL3273025 0.87
Hydroxyamine SCHEMBL1248 0.87
Hydroxyamine SCHEMBL15869353 0.87
Benzene SCHEMBL1735297 0.82
Bicarbonate SCHEMBL2085310 0.76
Hydroxyamine SCHEMBL23327360 0.75
Hydroxyamine SCHEMBL2224589 0.75
Hydroxyamine SCHEMBL482304 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8926762-B2 Apparatus and methods for movable megasonic wafer probe TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2015-01-06 US claimed
US-20130056031-A1 Apparatus and Methods for Movable Megasonic Wafer Probe TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2013-03-07 US claimed
US-20230170348-A1 DIELECTRIC REFLOW FOR BOUNDARY CONTROL INTERNATIONAL BUSINESS MACHINES CORPORATION 2023-06-01 US disclosed
WO-2023043608-A1 METHODS AND APPARATUS FOR MANUFACTURING AN ELECTRONIC APPARATUS CORNING INCORPORATED (US) 2023-03-23 WO disclosed
US-9764364-B2 Apparatus and methods for movable megasonic wafer probe TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2017-09-19 US disclosed
CN-107068594-A The Wafer Backside Cleaning in situ of Semiconductor substrate 台湾积体电路制造股份有限公司 2017-08-18 CN disclosed
US-9362124-B2 Method of patterning a metal gate of semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2016-06-07 US disclosed
US-20150206755-A1 METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2015-07-23 US disclosed
US-9082783-B2 Semiconductor device and fabrication method thereof MICRON TECHNOLOGY, INC. (US) 2015-07-14 US disclosed
US-20150107634-A1 Apparatus and Methods for Movable Megasonic Wafer Probe TAIWAN SEMICONDUCTOR MFG (TW) 2015-04-23 US disclosed
US-8993452-B2 Method of patterning a metal gate of semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2015-03-31 US disclosed
US-20150079756-A1 Semiconductor Device and Fabrication Method Thereof MICRON TECHNOLOGY, INC. 2015-03-19 US disclosed
US-8926762-B2 Apparatus and methods for movable megasonic wafer probe TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2015-01-06 US disclosed
US-20130130488-A1 Method of Patterning a Metal Gate of Semiconductor Device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2013-05-23 US disclosed
CN-102974563-A Apparatus and Methods for Movable Megasonic Wafer Probe TAIWAN SEMICONDUCTOR MFG 2013-03-20 CN disclosed
US-20130056031-A1 Apparatus and Methods for Movable Megasonic Wafer Probe TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2013-03-07 US disclosed
US-8357617-B2 Method of patterning a metal gate of semiconductor device TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2013-01-22 US disclosed
US-20100048011-A1 METHOD OF PATTERNING A METAL GATE OF SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2010-02-25 US disclosed
WO-2006054669-A1 TREATMENT LIQUID SUPPLY APPARATUS, SUBSTRATE TREATMENT APPARATUS AND TREATMENT LIQUID PREPARATION METHOD EBARA CORPORATION (JP) 2006-05-26 WO disclosed
US-5879945-A DECOMPOSING PEROXIDES PRESENT IN ABSORBING FLUID BEFORE PASSING AIR THROUGH TO MEASURE OXIDATION-REDUCTION POTENTIAL MITSUBISHI HEAVY INDUSTRIES, LTD. (JP) 1999-03-09 US disclosed