SCHEMBL3248535

SCHEMBL3248535

FCC(F)C(F)C(F)C(F)F.[AlH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1218128 0.97
Fluoride SCHEMBL28360298 0.93
SCHEMBL1024180 0.93
SCHEMBL9131975 0.93
SCHEMBL1022557 0.93
SCHEMBL7703497 0.93
SCHEMBL9155181 0.93
SCHEMBL32817 0.86
SCHEMBL2420943 0.85
SCHEMBL29188861 0.83

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2204472-A2 Methods for forming wiring and electrode JSR Corporation (JP) 2010-07-07 EP disclosed
EP-1462544-B1 Methods for forming wiring and electrode JSR CORP (JP) 2010-05-19 EP disclosed
US-7429778-B2 Methods for forming wiring and electrode JSR CORPORATION (JP) 2008-09-30 US disclosed
US-7071084-B2 Methods for forming wiring and electrode JSR CORPORATION (JP) 2006-07-04 US disclosed
US-20060024937-A1 Methods for forming wiring and electrode JSR CORPORATION (JP) 2006-02-02 US disclosed
US-6953600-B2 Complex of an amine compound and aluminum hydride and an organic solvent used to form wiring or an electrode which can be suitably used in a variety of electronic devices JSR CORPORATION (JP) 2005-10-11 US disclosed
US-20040192038-A1 Methods for forming wiring and electrode JSR CORPORATION (JP) 2004-09-30 US disclosed
EP-1462544-A2 Methods for forming wiring and electrode JSR Corporation (JP) 2004-09-29 EP disclosed
US-20030224152-A1 Complex of an amine compound and aluminum hydride and an organic solvent used to form wiring or an electrode which can be suitably used in a variety of electronic devices JSR CORPORATION (JP) 2003-12-04 US disclosed
US-6022814-A COATING A POLYSILOXANE/SILSESQUIOXANE ON THE SUBSTRATE; HEATING TO A TEMPERATURE RANGING FROM 250.DEGREE. C. TO THE GLASS TRANSITION POINT OF THE POLYMER; DIELECTRIC FILM OF LOW DENSITY AND A LARGE FREE VOLUME; HEAT RESISTANCE KABUSHIKI KAISHA TOSHIBA (JP) 2000-02-08 US disclosed