⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL16971259 | 1.00 | — | — | |
| Ammonia Solution, Strong SCHEMBL4806461 | 0.87 | — | — | |
| SCHEMBL28135884 | 0.87 | — | — | |
| SCHEMBL27717155 | 0.87 | — | — | |
| SCHEMBL29066817 | 0.87 | — | — | |
| SCHEMBL29118423 | 0.87 | — | — | |
| SCHEMBL28479679 | 0.87 | — | — | |
| SCHEMBL27690466 | 0.87 | — | — | |
| SCHEMBL27876772 | 0.87 | — | — | |
| SCHEMBL1357785 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250287626-A1 | SEMICONDUCTOR DEVICE WITH DRAIN ELECTRICAL CONTACT FORMING JUNCTIONS HAVING DIFFERENT ENERGY BARRIER HEIGHTS TO DRAIN LAYER | TEXAS INSTRUMENTS INCORPORATED | 2025-09-11 | — | — | US | claimed |
| CN-119486183-A | Semiconductor device having gate electrical contacts forming junctions with different energy barrier heights from the gate layer | 德克萨斯仪器股份有限公司 | 2025-02-18 | — | — | CN | claimed |
| US-20250048667-A1 | SEMICONDUCTOR DEVICE WITH GATE ELECTRICAL CONTACT FORMING JUNCTIONS HAVING DIFFERENT ENERGY BARRIER HEIGHTS TO GATE LAYER | TEXAS INSTRUMENTS INCORPORATED | 2025-02-06 | — | — | US | claimed |
| CN-108018463-B | Aluminum-titanium-tungsten ternary alloy target material for obtaining high-temperature-resistant coating by coating film on surface of metal material and preparation method thereof | 烟台南山学院 | 2019-12-13 | — | — | CN | claimed |
| CN-103402774-B | There is the low profile MEMS thermal printhead die of dorsal part electrical connection | KATEEVA, INC. (US) | 2016-01-13 | — | — | CN | claimed |
| US-8815626-B2 | Low-profile MEMS thermal printhead die having backside electrical connections | KATEEVA, INC. (US) | 2014-08-26 | — | — | US | claimed |
| US-20140024149-A1 | Low-Profile MEMS Thermal Printhead Die Having Backside Electrical Connections | KATEEVA, INC. (US) | 2014-01-23 | — | — | US | claimed |
| CN-103402774-A | Low-profile MEMS thermal printhead die having backside electrical connections | KATEEVA INC | 2013-11-20 | — | — | CN | claimed |
| US-20120200640-A1 | LOW-PROFILE MEMS THERMAL PRINTHEAD DIE HAVING BACKSIDE ELECTRICAL CONNECTIONS | KATEEVA, INC. (US) | 2012-08-09 | — | — | US | claimed |
| US-4062677-A | Tungsten-titanium-aluminum master alloy | READING ALLOYS, INC. (US) | 1977-12-13 | — | — | US | claimed |
| US-20260150321-A1 | BUFFER LAYER FOR HIGH ELECTRON MOBILITY TRANSISTORS AND METHODS OF MANUFACTURING THE SAME | TEXAS INSTRUMENTS INCORPORATED (US) | 2026-05-28 | — | — | US | disclosed |
| US-20260123030-A1 | P-TYPE NITRIDE-BASED TRANSISTOR | TEXAS INSTRUMENTS INC (US) | 2026-04-30 | — | — | US | disclosed |
| US-20260068261-A1 | FIELD PLATE INTEGRATION FOR SELF-ALIGNED CONTACT AND METHODS OF MANUFACTURING THE SAME | TEXAS INSTRUMENTS INC (US) | 2026-03-05 | — | — | US | disclosed |
| US-20250311409-A1 | ETCH STOP ARCHITECTURES FOR POWER DEVICE AND PASSIVE COMPONENTS | TEXAS INSTRUMENTS INCORPORATED | 2025-10-02 | — | — | US | disclosed |
| US-20250301778-A1 | SEMICONDUCTOR DEVICES IN INTEGRATED CIRCUIT HAVING DIFFERENT THRESHOLD VOLTAGES | TEXAS INSTRUMENTS INCORPORATED | 2025-09-25 | — | — | US | disclosed |
| US-4104697-A | Discrete, fixed-value capacitor | TEXAS INSTRUMENTS INCORPORATED (US) | 1978-08-01 | — | — | US | disclosed |
| US-4062677-A | Tungsten-titanium-aluminum master alloy | READING ALLOYS, INC. (US) | 1977-12-13 | — | — | US | disclosed |
| US-4062677-A | Tungsten-titanium-aluminum master alloy | READING ALLOYS, INC. (US) | 1977-12-13 | — | — | US | disclosed |
| US-4056642-A | Method of fabricating metal-semiconductor interfaces | DATA GENERAL CORPORATION (US) | 1977-11-01 | — | — | US | disclosed |
| US-4015175-A | Discrete, fixed-value capacitor | TEXAS INSTRUMENTS INCORPORATED (US) | 1977-03-29 | — | — | US | disclosed |