⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3166215 | 1.00 | — | — | |
| SCHEMBL27838614 | 0.71 | — | — | |
| SCHEMBL9509932 | 0.69 | — | — | |
| SCHEMBL19509996 | 0.69 | — | — | |
| SCHEMBL9509929 | 0.69 | — | — | |
| SCHEMBL17469489 | 0.67 | — | — | |
| SCHEMBL20605353 | 0.67 | — | — | |
| SCHEMBL10400205 | 0.64 | — | — | |
| SCHEMBL12131649 | 0.64 | — | — | |
| SCHEMBL5986869 | 0.64 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20040105934-A1 | Ruthenium layer formation for copper film deposition | APPLIED MATERIALS, INC. | 2004-06-03 | — | — | US | claimed |
| US-11282745-B2 | Methods for filling features with ruthenium | APPLIED MATERIALS, INC. (US) | 2022-03-22 | — | — | US | disclosed |
| US-9406558-B2 | Cu wiring fabrication method and storage medium | TOKYO ELECTRON LIMITED (JP) | 2016-08-02 | — | — | US | disclosed |
| US-20150332961-A1 | Cu Wiring Fabrication Method and Storage Medium | TOKYO ELECTRON LIMITED (JP) | 2015-11-19 | — | — | US | disclosed |
| US-9064690-B2 | Method for forming Cu wiring | TOKYO ELECTRON LIMITED (JP) | 2015-06-23 | — | — | US | disclosed |
| US-20140045329-A1 | METHOD FOR FORMING CU WIRING | TOKYO ELECTRON LIMITED (JP) | 2014-02-13 | — | — | US | disclosed |
| US-7691442-B2 | Ruthenium or cobalt as an underlayer for tungsten film deposition | APPLIED MATERIALS, INC. (US) | 2010-04-06 | — | — | US | disclosed |
| US-20090142474-A1 | RUTHENIUM AS AN UNDERLAYER FOR TUNGSTEN FILM DEPOSITION | APPLIED MATERIALS, INC. | 2009-06-04 | — | — | US | disclosed |
| US-7264846-B2 | Ruthenium layer formation for copper film deposition | APPLIED MATERIALS, INC. (US) | 2007-09-04 | — | — | US | disclosed |
| US-20040105934-A1 | Ruthenium layer formation for copper film deposition | APPLIED MATERIALS, INC. | 2004-06-03 | — | — | US | disclosed |