⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL7763546 | 0.82 | — | — | |
| SCHEMBL27584744 | 0.82 | — | — | |
| SCHEMBL11581208 | 0.82 | — | — | |
| SCHEMBL7763548 | 0.82 | — | — | |
| SCHEMBL11576562 | 0.71 | — | — | |
| SCHEMBL3675 | 0.71 | — | — | |
| SCHEMBL8502729 | 0.71 | — | — | |
| SCHEMBL8506573 | 0.71 | — | — | |
| SCHEMBL8911858 | 0.71 | — | — | |
| SCHEMBL17868355 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7189292-B2 | Electronic with an alloy of silver and beryllium, and a surface layer of beryllium oxide made by oxidizing the surface of said alloy that acts as a barrier layer; useful for back end of the line (BEOL) metallic conductors in microelectronics devices such as memory or logic devices | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-03-13 | — | — | US | claimed |
| US-7694871-B2 | formed by selectively oxidizing alloying element by annealing at temperature of about 250 degrees to about 500 degrees C. in an oxidizing atmosphere containing an oxidizing agent having a partial pressure of about 10-8 to about 1 Torr, forming a layer of alloying element oxide on the alloy | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2010-04-13 | — | — | US | disclosed |
| US-20090232971-A1 | formed by selectively oxidizing alloying element by annealing at temperature of about 250 degrees to about 500 degrees C. in an oxidizing atmosphere containing an oxidizing agent having a partial pressure of about 10-8 to about 1 Torr, forming a layer of alloying element oxide on the alloy | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-09-17 | — | — | US | disclosed |
| US-7527188-B2 | Electronic with an alloy of silver and beryllium, and a surface layer of beryllium oxide made by oxidizing the surface of said alloy that acts as a barrier layer; useful for back end of the line (BEOL) metallic conductors in microelectronics devices such as memory or logic devices | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-05-05 | — | — | US | disclosed |
| CN-100387738-C | Self-encapsulated silver alloys for interconnects | IBM (US) | 2008-05-14 | — | — | CN | disclosed |
| US-20070161227-A1 | Electronic with an alloy of silver and beryllium, and a surface layer of beryllium oxide made by oxidizing the surface of said alloy that acts as a barrier layer; useful for back end of the line (BEOL) metallic conductors in microelectronics devices such as memory or logic devices | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-07-12 | — | — | US | disclosed |
| US-7189292-B2 | Electronic with an alloy of silver and beryllium, and a surface layer of beryllium oxide made by oxidizing the surface of said alloy that acts as a barrier layer; useful for back end of the line (BEOL) metallic conductors in microelectronics devices such as memory or logic devices | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2007-03-13 | — | — | US | disclosed |
| CN-1619002-A | Self-encapsulated silver alloys for interconnects | IBM (US) | 2005-05-25 | — | — | CN | disclosed |
| US-20050092399-A1 | Electronic with an alloy of silver and beryllium, and a surface layer of beryllium oxide made by oxidizing the surface of said alloy that acts as a barrier layer; useful for back end of the line (BEOL) metallic conductors in microelectronics devices such as memory or logic devices | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-05-05 | — | — | US | disclosed |
| EP-0955565-A2 | Mirror for soft x-ray exposure apparatus | NIKON CORPORATION (JP) | 1999-11-10 | — | — | EP | disclosed |
| EP-0353467-A1 | Catalysts regeneration process | BASF Aktiengesellschaft (DE) | 1990-02-07 | — | — | EP | disclosed |
| US-4456896-A | Low cost relay | TRW CANADA LIMITED (CA) | 1984-06-26 | — | — | US | disclosed |
| US-4049488-A | Method of manufacturing a semiconductor device | U.S. PHILIPS CORPORATION (US) | 1977-09-20 | — | — | US | disclosed |
| US-4023981-A | PIGMENTS | PRODUITS CHIMIQUES UGINE KUHLMANN (FR) | 1977-05-17 | — | — | US | disclosed |