⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9421787 | 0.89 | — | — | |
| SCHEMBL28529086 | 0.80 | — | — | |
| SCHEMBL13279759 | 0.80 | — | — | |
| SCHEMBL28838048 | 0.80 | — | — | |
| SCHEMBL1895030 | 0.80 | — | — | |
| SCHEMBL28932269 | 0.80 | — | — | |
| SCHEMBL10824466 | 0.80 | — | — | |
| SCHEMBL9234557 | 0.80 | — | — | |
| SCHEMBL5415465 | 0.80 | — | — | |
| SCHEMBL2734608 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 64 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-1283000-C | Technology for forming side-wall of flash memory control grid cumulate texture | SHANGHAI HUA HONG GROUP CO LTD (CN) | 2006-11-01 | — | — | CN | claimed |
| CN-1547253-A | Technology for forming side-wall of flash memory control grid cumulate texture | () | 2004-11-17 | — | — | CN | claimed |
| EP-1018145-A2 | MICROBELLOWS ACTUATOR | CALIFORNIA INSTITUTE OF TECHNOLOGY (US) | 2000-07-12 | — | — | EP | claimed |
| WO-1998048608-A2 | MICROBELLOWS ACTUATOR | CALIFORNIA INSTITUTE OF TECHNOLOGY (US) | 1998-11-05 | — | — | WO | claimed |
| JP-9260586-A | — | — | None | — | — | JP | disclosed |
| US-10249674-B2 | Semiconductor device and electronic apparatus including a semiconductor device having bonded sensor and logic substrates | SONY CORPORATION (JP) | 2019-04-02 | — | — | US | disclosed |
| CN-108565221-A | Ultra-low interface state interface structure matched with (Al, In) GaN material and preparation method thereof | 中国科学院微电子研究所 | 2018-09-21 | — | — | CN | disclosed |
| US-20170338268-A1 | SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SOLID-STATE IMAGING DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE | SONY CORP (JP) | 2017-11-23 | — | — | US | disclosed |
| CN-107342216-A | Plasma-activated conforma dielectric film deposition | 诺发系统公司 | 2017-11-10 | — | — | CN | disclosed |
| CN-103890910-B | Method and apparatus for plasma activated conformal dielectric film deposition | 诺发系统公司 | 2017-05-17 | — | — | CN | disclosed |
| CN-103975419-B | Plasma activated conformal dielectric film deposition | 诺发系统公司 | 2017-04-12 | — | — | CN | disclosed |
| CN-103243310-B | Method for plasma activated conformal film deposition on substrate surface | 诺发系统公司 | 2017-04-12 | — | — | CN | disclosed |
| US-5874368-A | UNIFORM LOW TEMPERATURE LOW PRESSURE CHEMICAL VAPOR DEPOSITION | AIR PRODUCTS AND CHEMICALS, INC. (US) | 1999-02-23 | — | — | US | disclosed |
| EP-0886309-A1 | Dry oxidation for LOCOS isolation process using an anti-oxidation mask having a layered pad oxide and a silicon nitride stack and semiconductor device employing the same | LUCENT TECHNOLOGIES INC. (US) | 1998-12-23 | — | — | EP | disclosed |
| JP-H09260586-A | SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF | NIPPON STEEL CORP | 1997-10-03 | — | — | JP | disclosed |
| US-4992299-A | Deposition of silicon nitride films from azidosilane sources | AIR PRODUCTS AND CHEMICALS, INC. (US) | 1991-02-12 | — | — | US | disclosed |
| EP-0096062-B1 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR | NCR CORPORATION (US) | 1986-06-04 | — | — | EP | disclosed |
| US-4438157-A | METAL-NITRIDE-OXIDE-SEMICONDUCTOR | NCR CORPORATION (US) | 1984-03-20 | — | — | US | disclosed |
| EP-0096062-A1 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR. | NCR CO (US) | 1983-12-21 | — | — | EP | disclosed |
| WO-1983002199-A1 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREFOR | NCR CO (US) | 1983-06-23 | — | — | WO | disclosed |