⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3415453 | 0.75 | — | — | |
| SCHEMBL7075617 | 0.72 | — | — | |
| SCHEMBL195834 | 0.64 | — | — | |
| SCHEMBL8380757 | 0.64 | — | — | |
| SCHEMBL10799443 | 0.60 | — | — | |
| SCHEMBL7745080 | 0.57 | — | — | |
| SCHEMBL4940841 | 0.57 | — | — | |
| SCHEMBL7743044 | 0.57 | — | — | |
| SCHEMBL49955 | 0.54 | — | — | |
| SCHEMBL3753028 | 0.52 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 25 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115197426-A | Synthesis method of hydroxyl silicone oil | 江苏众合硅基新材料有限公司 | 2022-10-18 | — | — | CN | claimed |
| CN-118063777-A | Method for preparing hydroxyl-terminated linear polysiloxane by inverse hydrolysis method | 华南理工大学 | 2024-05-24 | — | — | CN | disclosed |
| CN-115197426-A | Synthesis method of hydroxyl silicone oil | 江苏众合硅基新材料有限公司 | 2022-10-18 | — | — | CN | disclosed |
| CN-115197426-A | Synthesis method of hydroxyl silicone oil | 江苏众合硅基新材料有限公司 | 2022-10-18 | — | — | CN | disclosed |
| EP-3286250-A1 | COMPOSITION FOR FORMING COATING FILM AND METHOD FOR FORMING COATING FILM USING SAME | AZ Electronic Materials Luxembourg S.à.r.l. (LU) | 2018-02-28 | — | — | EP | disclosed |
| EP-2855018-B1 | PROCESS OF PREPARATION OF A CATALYST COMPRISING A GROUP VIII METAL AND SILICON AND PROCESS OF SELECTIVE HYDROGENATION USING THAT CATALYST | IFP ENERGIES NOW (FR) | 2017-10-18 | — | — | EP | disclosed |
| US-9695095-B2 | Process for preparing a catalyst based on a group VIII metal and containing silicon, and a process of selective hydrogenation implementing said catalyst | IFP Energies Nouvelles (FR) | 2017-07-04 | — | — | US | disclosed |
| WO-2016169631-A1 | COMPOSITION FOR FORMING COATING FILM AND METHOD FOR FORMING COATING FILM USING SAME | AZ Electronic Materials (Luxembourg) S.à.r.l. (LU) | 2016-10-27 | — | — | WO | disclosed |
| US-20150141718-A1 | PROCESS FOR PREPARING A CATALYST BASED ON A GROUP VIII METAL AND CONTAINING SILICON, AND A PROCESS OF SELECTIVE HYDROGENATION IMPLEMENTING SAID CATALYST | IFP Energies Nouvelles (FR) | 2015-05-21 | — | — | US | disclosed |
| EP-2855018-A1 | PROCESS FOR PREPARING A CATALYST BASED ON A GROUP VIII METAL AND CONTAINING SILICON AND SELECTIVE HYDROGENATION PROCESS USING SAID CATALYST | IFP Energies nouvelles (FR) | 2015-04-08 | — | — | EP | disclosed |
| US-20080014761-A1 | Decreasing the etch rate of silicon nitride by carbon addition | APPLIED MATERIALS, INC. | 2008-01-17 | — | — | US | disclosed |
| US-20070275569-A1 | METHODS AND APPARATUS FOR E-BEAM TREATMENT USED TO FABRICATE INTEGRATED CIRCUIT DEVICES | APPLIED MATERIALS, INC. | 2007-11-29 | — | — | US | disclosed |
| US-7256139-B2 | Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices | APPLIED MATERIALS, INC. (US) | 2007-08-14 | — | — | US | disclosed |
| US-20060219175-A1 | OXIDE-LIKE SEASONING FOR DIELECTRIC LOW K FILMS | APPLIED MATERIALS, INC. | 2006-10-05 | — | — | US | disclosed |
| US-7056560-B2 | Ultra low dielectric materials based on hybrid system of linear silicon precursor and organic porogen by plasma-enhanced chemical vapor deposition (PECVD) | APPLIES MATERIALS INC. (US) | 2006-06-06 | — | — | US | disclosed |
| US-7018941-B2 | Post treatment of low k dielectric films | APPLIED MATERIALS, INC. (US) | 2006-03-28 | — | — | US | disclosed |
| US-20050277302-A1 | Advanced low dielectric constant barrier layers | APPLIED MATERIALS, INC. | 2005-12-15 | — | — | US | disclosed |
| US-20050130404-A1 | Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices | APPLIED MATERIALS, INC. | 2005-06-16 | — | — | US | disclosed |
| US-5336798-A | Having terminal SIH group; intermediates for synthesis of conducive materials | SHIN-ETSU CHEMICAL COMPANY, LIMITED (JP) | 1994-08-09 | — | — | US | disclosed |
| US-4958040-A | FROM DIHALODIORGANOSILANE AND COMPOUND WITH SILICON-HYDROGEN BOND | SHIN-ETSU CHEMICAL | 1990-09-18 | — | — | US | disclosed |