⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL12256443 | 0.91 | — | — | |
| SCHEMBL12256433 | 0.84 | — | — | |
| SCHEMBL12308955 | 0.83 | — | — | |
| SCHEMBL13259891 | 0.82 | — | — | |
| SCHEMBL13636827 | 0.81 | — | — | |
| SCHEMBL12256275 | 0.80 | — | — | |
| SCHEMBL12256513 | 0.80 | — | — | |
| SCHEMBL12256451 | 0.79 | — | — | |
| SCHEMBL14494478 | 0.79 | — | — | |
| SCHEMBL14494577 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2356517-B1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORP (JP) | 2017-01-25 | — | — | EP | disclosed |
| US-8771916-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-07-08 | — | — | US | disclosed |
| US-8771916-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2014-07-08 | — | — | US | disclosed |
| US-8450041-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-05-28 | — | — | US | disclosed |
| US-8450041-B2 | Actinic ray-sensitive or radiation-sensitive resin composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-05-28 | — | — | US | disclosed |
| US-20110236828-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20110236828-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-09-29 | — | — | US | disclosed |
| US-20100183979-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20100183980-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20100183980-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-20100183979-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2010-07-22 | — | — | US | disclosed |
| US-7691561-B2 | Positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-04-06 | — | — | US | disclosed |
| EP-2101217-A1 | Sulfonium salt-containing polymer, resist compositon, and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2009-09-16 | — | — | EP | disclosed |
| US-7514204-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2009-04-07 | — | — | US | disclosed |
| US-20080096131-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2008-04-24 | — | — | US | disclosed |
| US-20080008959-A1 | Resin comprising monomers of cyclopentyl- or cyclohexyl (meth)acrylate; hydroxyadamantyl (meth)acrylate; 3,8-epoxy-6-oxabicyclo[3.2.1]octyl (meth)acrylat;, and/or fluoroalkyl (meth)acrylate; ArF lithography; resolution; forms a pattern with high rectangularity | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-01-10 | — | — | US | disclosed |