⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15495612 | 0.89 | — | — | |
| SCHEMBL5416594 | 0.84 | — | — | |
| SCHEMBL9404270 | 0.81 | — | — | |
| SCHEMBL5415403 | 0.81 | — | — | |
| SCHEMBL331462 | 0.81 | — | — | |
| SCHEMBL5410397 | 0.81 | — | — | |
| SCHEMBL13686038 | 0.80 | — | — | |
| SCHEMBL3420286 | 0.80 | — | — | |
| SCHEMBL28062778 | 0.80 | — | — | |
| SCHEMBL12109453 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1193 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250391655-A1 | METHOD OF FILLING GAP AND PROCESSING SYSTEM FOR SAME | ASM IP HOLDING BV (NL) | 2025-12-25 | — | — | US | claimed |
| WO-2024222666-A1 | POROUS MOLECULAR SIEVE MATERIAL, PREPARATION METHOD, AND APPLICATION THEREOF | 中国石油化工股份有限公司 | 2024-10-31 | — | — | WO | claimed |
| US-20240361695-A1 | STRUCTURES INCLUDING A SiOCN PHOTORESIST ADHESION LAYER AND METAL-OXIDE RESIST AND METHODS OF FORMING SAME | ASM IP HOLDING B.V. (NL) | 2024-10-31 | — | — | US | claimed |
| CN-118859631-A | Structure including photoresist adhesive layer and method of forming the same | ASM IP私人控股有限公司 | 2024-10-29 | — | — | CN | claimed |
| CN-118833831-A | Porous molecular sieve material, preparation method and application thereof | 中国石油化工股份有限公司 | 2024-10-25 | — | — | CN | claimed |
| CN-118598151-A | Molecular sieve material, preparation method and application thereof | 中国石油化工股份有限公司 | 2024-09-06 | — | — | CN | claimed |
| CN-107636097-B | Silicone polymer composition and use thereof | 奥普提汀公司 | 2024-03-15 | — | — | CN | claimed |
| US-11820929-B2 | Etching compositions | FUJIFILM ELECTRONIC MATERIALS U.S.A., INC. (US) | 2023-11-21 | — | — | US | claimed |
| US-20230288810-A1 | METHOD OF FORMING A STRUCTURE COMPRISING A PHOTORESIST UNDERLAYER | ASM IP HOLDING B.V. (NL) | 2023-09-14 | — | — | US | claimed |
| CN-116736637-A | Method of forming a structure comprising a photoresist underlayer | ASM IP私人控股有限公司 | 2023-09-12 | — | — | CN | claimed |
| US-20080246153-A1 | ORGANIC SILICA-BASED FILM, METHOD OF FORMING THE SAME, COMPOSITION FOR FORMING INSULATING FILM FOR SEMICONDUCTOR DEVICE, INTERCONNECT STRUCTURE, AND SEMICONDUCTOR DEVICE | JSR CORPORATION (JP) | 2008-10-09 | — | — | US | claimed |
| EP-1970421-A1 | COATING LIQUID FOR FORMING LOW DIELECTRIC CONSTANT AMORPHOUS SILICA COATING FILM AND LOW DIELECTRIC CONSTANT AMORPHOUS SILICA COATING FILM OBTAINED FROM SUCH COATING LIQUID | CATALYSTS & CHEMICALS INDUSTRIES CO., LTD. (JP) | 2008-09-17 | — | — | EP | claimed |
| US-7399715-B2 | Organic silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2008-07-15 | — | — | US | claimed |
| WO-2007123309-A1 | MESOPOROUS INORGANIC COMPOSITE POWDER CONTAINING METAL ELEMENT IN ITS STRUCTURE AND THE METHOD FOR MANUFACTURING THEREOF | AMOREPACIFIC CORPORATION (KR) | 2007-11-01 | — | — | WO | claimed |
| US-20040146766-A1 | Proton electrolyte membranes, methods of making proton electrolyte membranes, and methods of use thereof | GEORGIA TECH RESEARCH CORPORATION | 2004-07-29 | — | — | US | claimed |
| EP-0922386-B1 | Controlled release compositions | ROHM & HAAS (US) | 2004-02-04 | — | — | EP | claimed |
| US-20030232137-A1 | Porogens, porogenated precursors and methods for using the same to provide porous organosilica glass films with low dielectric constants | VERSUM MATERIALS US, LLC | 2003-12-18 | — | — | US | claimed |
| EP-1354980-A1 | Method for forming a porous SiOCH layer. | AIR PRODUCTS AND CHEMICALS, INC. (US) | 2003-10-22 | — | — | EP | claimed |
| US-6090399-A | POROUS MATRIX | ROHM AND HAAS COMPANY (US) | 2000-07-18 | — | — | US | claimed |
| EP-0922386-A2 | Controlled release compositions | ROHM AND HAAS COMPANY (US) | 1999-06-16 | — | — | EP | claimed |