SCHEMBL3300494

SCHEMBL3300494

COc1ccc(O[SiH2]C)cc1

nearest known ligand 0.61

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 3/20 0.61
CA2 P00918 3/20 0.61
CA7 P43166 2/20 0.61
CA9 Q16790 2/20 0.61
CA12 O43570 1/20 0.61
CA14 Q9ULX7 1/20 0.61
ACHE P22303 1/20 0.50
TDP1 Q9NUW8 3/20 0.48
MAPK1 P28482 2/20 0.48
ALDH1A1 P00352 4/20 0.46
CYP3A4 P08684 2/20 0.46
KDM4E B2RXH2 1/20 0.46
NPC1 O15118 1/20 0.46
GAA P10253 1/20 0.46
MAPT P10636 1/20 0.46
THRB P10828 1/20 0.46
RECQL P46063 1/20 0.46
RAB9A P51151 1/20 0.46
NPSR1 Q6W5P4 1/20 0.46
L3MBTL1 Q9Y468 1/20 0.46

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
1,4-Dimethoxybenzene SCHEMBL21802643 0.78 CA1 (1.00) CA1CA2CA7CA9CA12
1,4-Dimethoxybenzene SCHEMBL8489 0.78 CA1 (1.00) CA1CA2CA7CA9CA12
SCHEMBL5961824 0.72 CA1 (0.61) CA1CA2CA7CA9CA12
Hydrochloric Acid SCHEMBL18528255 0.72 CA4 (0.46) CA1CA2CA9ALDH1A1RECQL
1,4-Dimethoxybenzene SCHEMBL11373286 0.72 CA1 (0.85) CA1CA2CA7CA9CA12
SCHEMBL5321146 0.70 CA1 (0.58) CA1CA2CA7CA9CA12
SCHEMBL7534896 0.69 CA1 (0.79) CA1CA2CA7CA9CA12
SCHEMBL11580995 0.69 CA1 (0.79) CA1CA2CA7CA9CA12
SCHEMBL6733562 0.69 CA1 (0.79) CA1CA2CA7CA9CA12
SCHEMBL83811 0.69 CA1 (0.79) CA1CA2CA7CA9CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1641908-B1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2010-11-17 EP disclosed
US-7736837-B2 Antireflective coating composition based on silicon polymer AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-06-15 US disclosed
US-20100093969-A1 Process for making siloxane polymers ZHANG RUZHI 2010-04-15 US disclosed
EP-2132253-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ Electronic Materials USA Corp. (US) 2009-12-16 EP disclosed
EP-2129733-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ Electronic Materials USA Corp. (US) 2009-12-09 EP disclosed
EP-2035518-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ Electronic Materials USA Corp. (US) 2009-03-18 EP disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 US disclosed
WO-2008104874-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-09-04 WO disclosed
WO-2008102259-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-08-28 WO disclosed
US-20080199789-A1 Antireflective Coating Composition Based on Silicon Polymer MERCK PATENT GMBH (DE) 2008-08-21 US disclosed
US-20070298349-A1 Antireflective Coating Compositions Comprising Siloxane Polymer AZ ELECTRONIC MATERIALS USA CORP. 2007-12-27 US disclosed
WO-2007148223-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2007-12-27 WO disclosed
EP-1641908-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-05 EP disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed