SCHEMBL3300499

SCHEMBL3300499

COc1ccccc1O[SiH2]C

nearest known ligand 0.65

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 3/20 0.65
CA2 P00918 3/20 0.65
CA7 P43166 2/20 0.65
CA9 Q16790 2/20 0.65
CA12 O43570 1/20 0.65
CA4 P22748 1/20 0.65
CA14 Q9ULX7 1/20 0.65
ALDH1A1 P00352 4/20 0.50
HTT P42858 2/20 0.50
L3MBTL1 Q9Y468 2/20 0.50
MAPK1 P28482 2/20 0.50
TDP1 Q9NUW8 3/20 0.46
TP53 P04637 2/20 0.46
TSHR P16473 1/20 0.46
ADRA2B P18089 1/20 0.46
PTGS1 P23219 1/20 0.46
ENPP2 Q13822 1/20 0.43
ORAI1 Q96D31 1/20 0.41
ORAI2 Q96SN7 1/20 0.41
ORAI3 Q9BRQ5 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
1,2-Dimethoxybenzene SCHEMBL5308636 0.81 CA1 (1.00) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL29351917 0.81 CA1 (1.00) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL105872 0.81 CA1 (1.00) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL28281281 0.78 CA1 (0.93) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL27683756 0.78 CA1 (0.93) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL28239483 0.78 CA1 (0.93) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL9793057 0.78 CA1 (0.93) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL28068677 0.78 CA1 (0.93) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL28602492 0.78 CA1 (0.93) CA1CA2CA7CA9CA12
1,2-Dimethoxybenzene SCHEMBL29229370 0.78 CA1 (0.93) CA1CA2CA7CA9CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1641908-B1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO LTD (JP) 2010-11-17 EP disclosed
US-7736837-B2 Antireflective coating composition based on silicon polymer AZ ELECTRONIC MATERIALS USA CORP. (US) 2010-06-15 US disclosed
US-20100093969-A1 Process for making siloxane polymers ZHANG RUZHI 2010-04-15 US disclosed
EP-2132253-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ Electronic Materials USA Corp. (US) 2009-12-16 EP disclosed
EP-2129733-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ Electronic Materials USA Corp. (US) 2009-12-09 EP disclosed
EP-2035518-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ Electronic Materials USA Corp. (US) 2009-03-18 EP disclosed
US-7442675-B2 Cleaning composition and method of cleaning semiconductor substrate TOKYO OHKA KOGYO CO., LTD. (JP) 2008-10-28 US disclosed
WO-2008104874-A1 PROCESS FOR MAKING SILOXANE POLYMERS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-09-04 WO disclosed
WO-2008102259-A2 ANTIREFLECTIVE COATING COMPOSITION BASED ON A SILICON POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-08-28 WO disclosed
US-20080199789-A1 Antireflective Coating Composition Based on Silicon Polymer MERCK PATENT GMBH (DE) 2008-08-21 US disclosed
US-20070298349-A1 Antireflective Coating Compositions Comprising Siloxane Polymer AZ ELECTRONIC MATERIALS USA CORP. 2007-12-27 US disclosed
WO-2007148223-A2 ANTIREFLECTIVE COATING COMPOSITIONS COMPRISING SILOXANE POLYMER AZ ELECTRONIC MATERIALS USA CORP. (DE) 2007-12-27 WO disclosed
EP-1641908-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2006-04-05 EP disclosed
WO-2004113486-A1 CLEANING COMPOSITION, METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE, AND METHOD OF FORMING WIRING ON SEMICONDUCTOR SUBSTRATE TOKYO OHKA KOGYO CO., LTD. (JP) 2004-12-29 WO disclosed
US-20040259761-A1 Cleaning composition, method of cleaning semiconductor substrate, and method of forming wiring on semiconductor substrate TOKYO OHKA KOGYO CO., LTD. INTEL CORPORATION 2004-12-23 US disclosed
US-6515073-B2 Comprising di-, tri- and/or tetra-(alkoxy/phenoxy)silanes and a thermosetting resin which can be condensed therewith which has an absorption capacity with respect to exposing light; can be etched at high rate for fine resist patterns TOKYO OHKA KOGYO CO., LTD. (JP) 2003-02-04 US disclosed
US-20010036998-A1 Anti-reflective coating-forming composition TOKYO OHKA KOGYO CO., LTD. (JP) 2001-11-01 US disclosed