SCHEMBL331394

SCHEMBL331394

CCO[Si](C)(C)C[Si](C)(C)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9676295 0.87
SCHEMBL12458696 0.84
SCHEMBL12458695 0.84
SCHEMBL13089135 0.82
SCHEMBL13994665 0.82
SCHEMBL308771 0.80
SCHEMBL108748 0.79
SCHEMBL331543 0.79
SCHEMBL13089172 0.76
SCHEMBL15242181 0.74

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 178 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230393477-A1 HIGH-TEMPERATURE METHODS OF FORMING PHOTORESIST UNDERLAYER AND SYSTEMS FOR FORMING SAME ASM IP HOLDING B.V. (NL) 2023-12-07 US claimed
CN-117170177-A High temperature method for forming photoresist underlayer and system for forming same ASM IP私人控股有限公司 2023-12-05 CN claimed
US-7500397-B2 Activated chemical process for enhancing material properties of dielectric films AIR PRODUCTS AND CHEMICALS, INC. (US) 2009-03-10 US claimed
US-20080199977-A1 Activated Chemical Process for Enhancing Material Properties of Dielectric Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2008-08-21 US claimed
EP-1959485-A2 Activated chemical process for enhancing material properties of dielectric films Air Products and Chemicals, Inc. (US) 2008-08-20 EP claimed
US-20230393477-A1 HIGH-TEMPERATURE METHODS OF FORMING PHOTORESIST UNDERLAYER AND SYSTEMS FOR FORMING SAME ASM IP HOLDING B.V. (NL) 2023-12-07 US disclosed
CN-117170177-A High temperature method for forming photoresist underlayer and system for forming same ASM IP私人控股有限公司 2023-12-05 CN disclosed
US-10474032-B2 Coating compositions ROHM AND HAAS ELECTRONIC MATERIALS LLC (US) 2019-11-12 US disclosed
US-10234762-B2 Pattern-forming method JSR CORPORATION (JP) 2019-03-19 US disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20170003592-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-01-05 US disclosed
EP-1265080-A2 Porous optical materials Shipley Company LLC (US) 2002-12-11 EP disclosed
US-6376634-B1 ORGANOSILICON POLYMERS JSR CORPORATION (JP) 2002-04-23 US disclosed
US-20010018129-A1 Process for producing silica-based film, silica-based film, insulating film, and semiconductor device JSR CORPORATION (JP) 2001-08-30 US disclosed
EP-1122770-A2 Silica-based insulating film and its manufacture JSR Corporation (JP) 2001-08-08 EP disclosed
US-20010009936-A1 Method of manufacturing material for forming insulating film JSR CORPORATION (JP) 2001-07-26 US disclosed
EP-1117102-A2 Method of manufacturing material for forming insulating film JSR Corporation (JP) 2001-07-18 EP disclosed
EP-1058274-A1 Composition for film formation and material for insulating film formation JSR Corporation (JP) 2000-12-06 EP disclosed
EP-1045290-A2 Composition for resist underlayer film and method for producing the same JSR Corporation (JP) 2000-10-18 EP disclosed