SCHEMBL3322720

SCHEMBL3322720

CC(=O)NC(NC(C)=O)(NC(C)=O)c1ccccc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 3/20 0.50
KCNN4 O15554 3/20 0.47
NAPRT Q6XQN6 1/20 0.46
HSD17B10 Q99714 1/20 0.46
HDAC3 O15379 1/20 0.45
HDAC4 P56524 1/20 0.45
HDAC1 Q13547 1/20 0.45
HDAC7 Q8WUI4 1/20 0.45
HDAC2 Q92769 1/20 0.45
HDAC10 Q969S8 1/20 0.45
HDAC11 Q96DB2 1/20 0.45
HDAC8 Q9BY41 1/20 0.45
HDAC6 Q9UBN7 1/20 0.45
HDAC9 Q9UKV0 1/20 0.45
HDAC5 Q9UQL6 1/20 0.45
KMT2A Q03164 2/20 0.43
CYP3A4 P08684 2/20 0.43
ALOX5 P09917 1/20 0.43
TSHR P16473 1/20 0.43
CYP2C19 P33261 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8226385 0.82 KCNN4 (0.50) MAPTKCNN4NAPRTHSD17B10HDAC3
SCHEMBL31358110 0.82 KCNN4 (0.47) MAPTKCNN4NAPRTHSD17B10HDAC3
SCHEMBL13881112 0.80 KCNN4 (0.45) MAPTKCNN4NAPRTHSD17B10HDAC3
SCHEMBL2283304 0.80 SSTR4 (0.51) MAPTKCNN4NAPRTHSD17B10HDAC3
SCHEMBL9344839 0.78 HDAC3 (0.47) MAPTKCNN4NAPRTHSD17B10HDAC3
SCHEMBL10741457 0.78 KCNN4 (0.44) MAPTKCNN4NAPRTHSD17B10HDAC3
SCHEMBL15881583 0.78 KCNN4 (0.44) MAPTKCNN4NAPRTHSD17B10HDAC3
SCHEMBL25840308 0.78 KCNN4 (0.44) MAPTKCNN4NAPRTHSD17B10HDAC3
SCHEMBL10633225 0.77 HDAC3 (0.46) MAPTKCNN4NAPRTHSD17B10HDAC3
SCHEMBL13897155 0.77 HDAC3 (0.46) MAPTKCNN4NAPRTHSD17B10HDAC3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8445178-B2 Composition for radical polymerization and method of forming pattern using the composition SAMSUNG ELECTRONICS CO., LTD. (KR) 2013-05-21 US disclosed
US-20100119976-A1 COMPOSITION FOR RADICAL POLYMERIZATION AND METHOD OF FORMING PATTERN USING THE COMPOSITION SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-05-13 US disclosed