SCHEMBL3325919

SCHEMBL3325919

CC(C)NC(=C[SiH3])NC(C)C

nearest known ligand 0.36

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.36
ALDH1A1 P00352 1/20 0.33
GAA P10253 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
CA12 O43570 1/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
MMP1 P03956 1/20 0.31
MMP2 P08253 1/20 0.31
MMP9 P14780 1/20 0.31
MMP8 P22894 1/20 0.31
CA9 Q16790 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10358021 0.73 TSHR (0.39) TSHRALDH1A1GAACA12CA1
SCHEMBL9893555 0.67 TDP1 (0.33) TSHRTDP1
SCHEMBL2104621 0.62
SCHEMBL764607 0.60
SCHEMBL23735441 0.60 TSHR (0.30) TSHR
SCHEMBL23252548 0.60 TSHR (0.30) TSHR
SCHEMBL22824805 0.58
SCHEMBL22824802 0.58
SCHEMBL9068459 0.58
SCHEMBL16250696 0.58

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2463404-B1 METHOD FOR FORMING SIO2 FILM VERSUM MAT US LLC (US) 2019-10-23 EP claimed
US-20140065844-A1 Amino Vinylsilane Precursors for Stressed SiN Films VERSUM MATERIALS US, LLC 2014-03-06 US claimed
US-8580993-B2 Amino vinylsilane precursors for stressed SiN films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-11-12 US claimed
US-8460753-B2 Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-06-11 US claimed
EP-2192207-B1 Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films AIR PROD & CHEM (US) 2012-06-20 EP claimed
EP-2463404-B1 METHOD FOR FORMING SIO2 FILM VERSUM MAT US LLC (US) 2019-10-23 EP disclosed
US-20140065844-A1 Amino Vinylsilane Precursors for Stressed SiN Films VERSUM MATERIALS US, LLC 2014-03-06 US disclosed
US-8580993-B2 Amino vinylsilane precursors for stressed SiN films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-11-12 US disclosed
US-8460753-B2 Methods for depositing silicon dioxide or silicon oxide films using aminovinylsilanes AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-06-11 US disclosed
EP-2192207-B1 Method using amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films AIR PROD & CHEM (US) 2012-06-20 EP disclosed
EP-2465861-A1 Amino vinylsilane precursors for compressively stressed SiN films Air Products and Chemicals, Inc. (US) 2012-06-20 EP disclosed
US-20120148745-A1 Aminovinylsilane for CVD and ALD SiO2 Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2012-06-14 US disclosed
EP-2463404-A1 Aminovinylsilane for cvd and ald sio2 films Air Products and Chemicals, Inc. (US) 2012-06-13 EP disclosed
EP-2192207-A1 Amino vinylsilane precursors for the deposition of intrinsically compressively stressed SiN films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-06-02 EP disclosed
US-20100120262-A1 Amino Vinylsilane Precursors for Stressed SiN Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2010-05-13 US disclosed