SCHEMBL3339296

SCHEMBL3339296

Oc1cccc([Si]2(c3ccccc3)CCCCO2)c1

nearest known ligand 0.33

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 3/20 0.33
CA2 P00918 3/20 0.33
CA9 Q16790 3/20 0.33
CYP3A4 P08684 2/20 0.33
CA14 Q9ULX7 2/20 0.33
CA1 P00915 2/20 0.33
ALDH1A1 P00352 1/20 0.33
LMNA P02545 1/20 0.33
CA5A P35218 1/20 0.33
HSD17B10 Q99714 1/20 0.33
CA5B Q9Y2D0 1/20 0.33
CA6 P23280 1/20 0.33
TSHR P16473 1/20 0.33
HSD17B1 P14061 2/20 0.31
HSD17B2 P37059 2/20 0.31
MGAM O43451 1/20 0.31
GAA P10253 1/20 0.31
SI P14410 1/20 0.31
MGAM2 Q2M2H8 1/20 0.31
GLA P06280 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL35817 0.85
SCHEMBL28876706 0.83
Ammonia Solution, Strong SCHEMBL3882937 0.83
Ammonia Solution, Strong SCHEMBL277599 0.83
SCHEMBL7522856 0.79
SCHEMBL9351404 0.78 KDM4E (0.32) CA12CA2CA9CYP3A4CA14
SCHEMBL1082507 0.77
SCHEMBL28445987 0.70
Phenol SCHEMBL1440050 0.69 CA12 (0.42) CA12CA2CA9CYP3A4CA14
SCHEMBL28462254 0.68

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6455416-B1 Developer soluble dyed BARC for dual damascene process ADVANCED MICRO DEVICES, INC. 2002-09-24 US claimed
US-9595670-B1 Resistive random access memory (RRAM) cell and method for forming the RRAM cell Crossbar, Inc. (US) 2017-03-14 US disclosed
US-8445372-B2 Selective silicide formation using resist etch back SPANSION LLC (US) 2013-05-21 US disclosed
US-20100099249-A1 SELECTIVE SILICIDE FORMATION USING RESIST ETCH BACK SPANSION LLC (US) 2010-04-22 US disclosed
US-7691751-B2 Selective silicide formation using resist etchback SPANSION LLC (US) 2010-04-06 US disclosed
US-20090111265-A1 SELECTIVE SILICIDE FORMATION USING RESIST ETCHBACK SPANSION LLC (US) 2009-04-30 US disclosed
WO-2009055384-A1 SELECTIVE SILICIDE FORMATION USING RESIST ETCH BACK SPANSION LLC (US) 2009-04-30 WO disclosed
US-7056646-B1 Use of base developers as immersion lithography fluid ADVANCED MICRO DEVICES, INC. (US) 2006-06-06 US disclosed
US-6861209-B2 Method to enhance resolution of a chemically amplified photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2005-03-01 US disclosed
US-20040106070-A1 Method to enhance resolution of a chemically amplified photoresist INTERNATIONAL BUSINESS MACHINES CORPORATION 2004-06-03 US disclosed
US-6534243-B1 A coating containing a cleaving compound to trim resist features; permitting a deprotection region to form within an inner portion of the patterned resist; removing coating and deprotection region to provide a second patterned feature ADVANCED MICRO DEVICES, INC. 2003-03-18 US disclosed
US-6492075-B1 COATING WITH CLEAVING COMPOUND TO CONTROLLABLY DECREASE SIZE OF DEVELOPED RESIST ADVANCED MICRO DEVICES, INC. 2002-12-10 US disclosed
US-6455416-B1 Developer soluble dyed BARC for dual damascene process ADVANCED MICRO DEVICES, INC. 2002-09-24 US disclosed
US-6274289-B1 Chemical resist thickness reduction process ADVANCED MICRO DEVICES, INC. 2001-08-14 US disclosed