SCHEMBL336180

SCHEMBL336180

CCOC1(OCC)CC[Si](C)(C)[Si](OCC)(OCC)O1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL182451 0.82
SCHEMBL5024992 0.79
SCHEMBL5079140 0.77
SCHEMBL9495368 0.74
SCHEMBL7168060 0.71
SCHEMBL5682511 0.68
SCHEMBL1092021 0.67
SCHEMBL1091424 0.67
SCHEMBL17274724 0.67
SCHEMBL417175 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 93 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2023183902-A1 METHODS FOR APPLYING DECORATIVE METAL FILMS ON POLYMERIC SURFACES VERGASON TECHNOLOGY, INC. (US) 2023-09-28 WO claimed
US-20230304139-A1 METHODS FOR APPLYING DECORATIVE METAL FILMS ON POLYMERIC SURFACES VERGASON TECHNOLOGY 2023-09-28 US claimed
CN-112625243-B Fluorine-containing modified polysiloxane, and preparation method and application thereof 山东东岳高分子材料有限公司 2022-09-02 CN claimed
CN-112552516-B Modified polysiloxane containing fluorine ring bodies, preparation method and application thereof 山东东岳高分子材料有限公司 2022-07-01 CN claimed
CN-112625243-A Fluorine-containing modified polysiloxane, preparation method and application thereof 山东东岳高分子材料有限公司 2021-04-09 CN claimed
CN-112552516-A Modified polysiloxane containing fluorine ring bodies, preparation method and application thereof 山东东岳高分子材料有限公司 2021-03-26 CN claimed
US-7704894-B1 Method of eliminating small bin defects in high throughput TEOS films NOVELLUS SYSTEMS, INC. (US) 2010-04-27 US claimed
US-20060079099-A1 Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2006-04-13 US claimed
EP-4681802-A1 SEPARATION METHOD AND SEPARATION DEVICE Kogakuin University (JP) 2026-01-21 EP disclosed
US-20250308883-A1 INTEGRATING NITRIDE STRESS COMPENSATION LAYERS FOR THICK OXIDE WAFER CREATION TOKYO ELECTRON LIMITED (JP) 2025-10-02 US disclosed
US-20250283221-A1 CARRIER RING WITH TABS LAM RES CORP (US) 2025-09-11 US disclosed
US-12338531-B2 Spatially tunable deposition to compensate within wafer differential bow LAM RESEARCH CORPORATION (US) 2025-06-24 US disclosed
US-20250118592-A1 APPARATUSES FOR BACKSIDE WAFER PROCESSING WITH EDGE-ONLY WAFER CONTACT LAM RESEARCH CORPORATION (US) 2025-04-10 US disclosed
CN-119615129-A PECVD deposition system for deposition on a selective side of a substrate 朗姆研究公司 2025-03-14 CN disclosed
US-20050260420-A1 Low dielectric materials and methods for making same VERSUM MATERIALS US, LLC 2005-11-24 US disclosed
US-20050116346-A1 Low dielectric materials and methods for making same VERSUM MATERIALS US, LLC 2005-06-02 US disclosed
EP-1464410-A1 Low dielectric materials and methods for making same AIR PRODUCTS AND CHEMICALS, INC. (US) 2004-10-06 EP disclosed
WO-2004073048-A2 APPARATUS AND METHODS FOR FORMING FILMS ON SUBSTRATES SYMYX TECHNOLOGIES, INC. (US) 2004-08-26 WO disclosed
CN-1497613-A Low dielectric material and preparation method thereof 2004-05-19 CN disclosed
EP-1369907-A2 Low dielectric materials and methods for making same AIR PRODUCTS AND CHEMICALS, INC. (US) 2003-12-10 EP disclosed