SCHEMBL3362897

SCHEMBL3362897

CC(C)(C(=O)OF)C(F)C(F)C(F)C(F)C(F)C(=O)OF

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29053969 0.72
SCHEMBL6514810 0.72
SCHEMBL28205888 0.68
SCHEMBL2315761 0.67
SCHEMBL28815562 0.66
SCHEMBL27916110 0.66
SCHEMBL27613645 0.66
SCHEMBL27834062 0.66
SCHEMBL21271525 0.64
SCHEMBL28966474 0.63

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7642200-B2 Methods of forming a thin film and methods of manufacturing a capacitor and a gate structure using the same SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-01-05 US disclosed
US-20060166512-A1 Methods of forming a thin film and methods of manufacturing a capacitor and a gate structure using the same SAMSUNG ELECTRONICS CO., LTD. 2006-07-27 US disclosed