SCHEMBL336846

SCHEMBL336846

C[C]1C=CC=C1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27688359 0.95
SCHEMBL28765948 0.95
SCHEMBL27688235 0.95
SCHEMBL28972054 0.88
SCHEMBL29043245 0.84
Toluene SCHEMBL451397 0.82
Toluene SCHEMBL6474268 0.76
SCHEMBL1052145 0.67
SCHEMBL1052146 0.67
SCHEMBL2480637 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 91 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117903216-A Phosphine-phenol single metallocene complex and preparation method and application thereof 中国石油化工股份有限公司 2024-04-19 CN claimed
WO-2024078525-A1 PHOSPHINE-PHENOL HALF-METALLOCENE COMPLEX, AND PREPARATION METHOD THEREFOR AND USE THEREOF 中国石油化工股份有限公司 2024-04-18 WO claimed
CN-117903216-A Phosphine-phenol single metallocene complex and preparation method and application thereof 中国石油化工股份有限公司 2024-04-19 CN disclosed
WO-2024078525-A1 PHOSPHINE-PHENOL HALF-METALLOCENE COMPLEX, AND PREPARATION METHOD THEREFOR AND USE THEREOF 中国石油化工股份有限公司 2024-04-18 WO disclosed
CN-112470257-B Method for forming a crystallographically stable ferroelectric hafnium zirconium-based film for semiconductor devices 东京毅力科创株式会社 2024-03-29 CN disclosed
CN-111344316-B Polyethylene compositions and articles made therefrom 埃克森美孚化学专利公司 2023-02-03 CN disclosed
WO-2023008058-A1 FLOW BATTERY SYSTEM EMPLOYING REDOX CONTROL OF CO2 国立研究開発法人産業技術総合研究所 2023-02-02 WO disclosed
CN-114944320-A Reactor to form a film on sidewalls of a memory cell 美光科技公司 2022-08-26 CN disclosed
CN-110431253-B Raw material for chemical vapor deposition comprising iridium complex and chemical vapor deposition method using the same 田中贵金属工业株式会社 2022-02-25 CN disclosed
US-11084837-B2 Chemical deposition raw material including iridium complex and chemical deposition method using the chemical deposition raw material TANAKA KIKINZOKU KOGYO K.K. (JP) 2021-08-10 US disclosed
CN-112470257-A Method of forming crystallographically stable ferroelectric hafnium zirconium based films for semiconductor devices 东京毅力科创株式会社 2021-03-09 CN disclosed
US-20040249096-A1 Class of metallocenes and method of producing polyethylene EXXONMOBIL CHEMICAL PATENTS INC. 2004-12-09 US disclosed
US-6803170-B2 MIXTURE CONTAINING ACID GENERATOR SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. (JP) 2004-10-12 US disclosed
EP-1179749-B1 Resist composition and method for manufacturing semiconductor device using the resist composition SEMICONDUCTOR LEADING EDGE TEC (JP) 2003-10-08 EP disclosed
US-20020022193-A1 Resist composition and method for manufacturing semiconductor device using the resist composition SEMICONDUCTOR LEADING EDGE TECHNOLOGIES, INC. 2002-02-21 US disclosed
EP-1179749-A1 Resist composition and method for manufacturing semiconductor device using the resist composition Semiconductor Leading Edge Technologies, Inc. (JP) 2002-02-13 EP disclosed
CN-1277625-A Enhanced dye durability through controlled dye environment MINNESOTA MINING & MFG (US) 2000-12-20 CN disclosed
US-6010826-A Resist composition NIPPON ZEON CO., LTD. (JP) 2000-01-04 US disclosed
CN-1192200-A Phenylacetic acid derivatives, process and intermediates for their preparation, and their use as pest-killing compositions and fungicides BASF AG (DE) 1998-09-02 CN disclosed
EP-0786701-A1 RESIST COMPOSITION NIPPON ZEON CO., LTD. (JP) 1997-07-30 EP disclosed