⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL285185 | 1.00 | — | — | |
| SCHEMBL31264877 | 0.97 | — | — | |
| SCHEMBL31283789 | 0.97 | — | — | |
| SCHEMBL28519775 | 0.97 | — | — | |
| SCHEMBL28535779 | 0.97 | — | — | |
| SCHEMBL1628933 | 0.97 | — | — | |
| SCHEMBL31264940 | 0.97 | — | — | |
| SCHEMBL31042220 | 0.97 | — | — | |
| SCHEMBL1097724 | 0.97 | — | — | |
| SCHEMBL30154301 | 0.97 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 83 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2013177292-A1 | TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION | L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2013-11-28 | — | — | WO | claimed |
| WO-2013177284-A1 | HAFNIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION | L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2013-11-28 | — | — | WO | claimed |
| WO-2013177269-A2 | ZIRCONIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION | L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2013-11-28 | — | — | WO | claimed |
| CN-112470257-B | Method for forming a crystallographically stable ferroelectric hafnium zirconium-based film for semiconductor devices | 东京毅力科创株式会社 | 2024-03-29 | — | — | CN | disclosed |
| CN-110431253-B | Raw material for chemical vapor deposition comprising iridium complex and chemical vapor deposition method using the same | 田中贵金属工业株式会社 | 2022-02-25 | — | — | CN | disclosed |
| US-11084837-B2 | Chemical deposition raw material including iridium complex and chemical deposition method using the chemical deposition raw material | TANAKA KIKINZOKU KOGYO K.K. (JP) | 2021-08-10 | — | — | US | disclosed |
| CN-112470257-A | Method of forming crystallographically stable ferroelectric hafnium zirconium based films for semiconductor devices | 东京毅力科创株式会社 | 2021-03-09 | — | — | CN | disclosed |
| US-10790149-B2 | Method of forming crystallographically stabilized ferroelectric hafnium zirconium based films for semiconductor devices | TOKYO ELECTRON LIMITED (JP) | 2020-09-29 | — | — | US | disclosed |
| US-20200035493-A1 | METHOD OF FORMING CRYSTALLOGRAPHICALLY STABILIZED FERROELECTRIC HAFNIUM ZIRCONIUM BASED FILMS FOR SEMICONDUCTOR DEVICES | TOKYO ELECTRON LIMITED (JP) | 2020-01-30 | — | — | US | disclosed |
| US-10410858-B2 | Selective film deposition using halogen deactivation | TOKYO ELECTRON LIMITED (JP) | 2019-09-10 | — | — | US | disclosed |
| US-20190051521-A1 | SELECTIVE FILM DEPOSITION USING HALOGEN DEACTIVATION | TOKYO ELECTRON LIMITED (JP) | 2019-02-14 | — | — | US | disclosed |
| US-20070237699-A1 | METHOD OF FORMING MIXED RARE EARTH OXYNITRIDE AND ALUMINUM OXYNITRIDE FILMS BY ATOMIC LAYER DEPOSITION | TOKYO ELECTRON LIMITED (JP) | 2007-10-11 | — | — | US | disclosed |
| WO-2007115029-A2 | METHOD OF FORMING MIXED RARE EARTH OXIDE AND MIXED RARE EARTH ALUMINATE FILMS BY ATOMIC LAYER DEPOSITION | TOKYO ELECTRON LIMITED (JP) | 2007-10-11 | — | — | WO | disclosed |
| US-20070235821-A1 | SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC CONTAINING MIXED RARE EARTH ELEMENTS | TOKYO ELECTRON LIMITED (JP) | 2007-10-11 | — | — | US | disclosed |
| EP-1629018-A1 | CLASS OF METALLOCENES AND METHOD OF PRODUCING POLYETHYLENE | Univation Technologies LLC (US) | 2006-03-01 | — | — | EP | disclosed |
| WO-2005103318-A1 | HIGH NUCLEATION DENSITY ORGANOMETALLIC COMPOUNDS | PRAXAIR TECHNOLOGY, INC. (US) | 2005-11-03 | — | — | WO | disclosed |
| US-6911508-B2 | Class of metallocenes and method of producing polyethylene | UNIVATION TECHNOLOGIES, LLC (US) | 2005-06-28 | — | — | US | disclosed |
| WO-2004108771-A1 | CLASS OF METALLOCENES AND METHOD OF PRODUCING POLYETHYLENE | UNIVATION TECHNOLOGIES, LLC (US) | 2004-12-16 | — | — | WO | disclosed |
| US-20040249096-A1 | Class of metallocenes and method of producing polyethylene | EXXONMOBIL CHEMICAL PATENTS INC. | 2004-12-09 | — | — | US | disclosed |
| EP-0745607-A2 | Metallocene preparation and use | PHILLIPS PETROLEUM COMPANY (US) | 1996-12-04 | — | — | EP | disclosed |