SCHEMBL338057

SCHEMBL338057

CCCC1=CC=CC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL410745 1.00
Potassium SCHEMBL31591226 0.97
SCHEMBL21356372 0.97
SCHEMBL31463341 0.97
SCHEMBL31264945 0.97
Lithium SCHEMBL31124083 0.97
Magnesium SCHEMBL31374313 0.97
SCHEMBL1498262 0.97
SCHEMBL30919442 0.97
SCHEMBL28313755 0.97

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 79 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111936534-B Polyolefin resin composition and process for producing the same DL化学株式会社 2023-03-21 CN claimed
CN-111936534-A Polyolefin resin composition and process for producing the same 大林产业株式会社 2020-11-13 CN claimed
WO-2013177284-A1 HAFNIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2013-11-28 WO claimed
WO-2013177292-A1 TITANIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2013-11-28 WO claimed
WO-2013177269-A2 ZIRCONIUM-CONTAINING PRECURSORS FOR VAPOR DEPOSITION L'AIR LIQUIDE, SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) 2013-11-28 WO claimed
CN-112470257-B Method for forming a crystallographically stable ferroelectric hafnium zirconium-based film for semiconductor devices 东京毅力科创株式会社 2024-03-29 CN disclosed
CN-111936534-B Polyolefin resin composition and process for producing the same DL化学株式会社 2023-03-21 CN disclosed
CN-112470257-A Method of forming crystallographically stable ferroelectric hafnium zirconium based films for semiconductor devices 东京毅力科创株式会社 2021-03-09 CN disclosed
CN-111936534-A Polyolefin resin composition and process for producing the same 大林产业株式会社 2020-11-13 CN disclosed
US-10790149-B2 Method of forming crystallographically stabilized ferroelectric hafnium zirconium based films for semiconductor devices TOKYO ELECTRON LIMITED (JP) 2020-09-29 US disclosed
US-20200035493-A1 METHOD OF FORMING CRYSTALLOGRAPHICALLY STABILIZED FERROELECTRIC HAFNIUM ZIRCONIUM BASED FILMS FOR SEMICONDUCTOR DEVICES TOKYO ELECTRON LIMITED (JP) 2020-01-30 US disclosed
US-10410858-B2 Selective film deposition using halogen deactivation TOKYO ELECTRON LIMITED (JP) 2019-09-10 US disclosed
US-20070237699-A1 METHOD OF FORMING MIXED RARE EARTH OXYNITRIDE AND ALUMINUM OXYNITRIDE FILMS BY ATOMIC LAYER DEPOSITION TOKYO ELECTRON LIMITED (JP) 2007-10-11 US disclosed
US-20070235821-A1 SEMICONDUCTOR DEVICE WITH GATE DIELECTRIC CONTAINING MIXED RARE EARTH ELEMENTS TOKYO ELECTRON LIMITED (JP) 2007-10-11 US disclosed
WO-2007115029-A2 METHOD OF FORMING MIXED RARE EARTH OXIDE AND MIXED RARE EARTH ALUMINATE FILMS BY ATOMIC LAYER DEPOSITION TOKYO ELECTRON LIMITED (JP) 2007-10-11 WO disclosed
US-20070237698-A1 METHOD OF FORMING MIXED RARE EARTH NITRIDE AND ALUMINUM NITRIDE FILMS BY ATOMIC LAYER DEPOSITION TOKYO ELECTRON LIMITED (JP) 2007-10-11 US disclosed
EP-1629018-A1 CLASS OF METALLOCENES AND METHOD OF PRODUCING POLYETHYLENE Univation Technologies LLC (US) 2006-03-01 EP disclosed
US-6911508-B2 Class of metallocenes and method of producing polyethylene UNIVATION TECHNOLOGIES, LLC (US) 2005-06-28 US disclosed
WO-2004108771-A1 CLASS OF METALLOCENES AND METHOD OF PRODUCING POLYETHYLENE UNIVATION TECHNOLOGIES, LLC (US) 2004-12-16 WO disclosed
US-20040249096-A1 Class of metallocenes and method of producing polyethylene EXXONMOBIL CHEMICAL PATENTS INC. 2004-12-09 US disclosed