⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3790748 | 0.82 | — | — | |
| SCHEMBL3706611 | 0.82 | — | — | |
| SCHEMBL4527340 | 0.82 | — | — | |
| SCHEMBL9063497 | 0.82 | — | — | |
| SCHEMBL12097029 | 0.82 | — | — | |
| SCHEMBL5028751 | 0.82 | — | — | |
| SCHEMBL9897932 | 0.82 | — | — | |
| SCHEMBL12097050 | 0.82 | — | — | |
| SCHEMBL12096963 | 0.82 | — | — | |
| SCHEMBL12096964 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 700 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12501628-B2 | Memory comprising conductive ferroelectric material in series with dielectric material | INTEL CORPORATION (US) | 2025-12-16 | — | — | US | claimed |
| US-12490661-B2 | Control method for switches based on dual phase materials | QORVO US, INC. (US) | 2025-12-02 | — | — | US | claimed |
| US-20250359072-A1 | PHASE-CHANGE DEVICE STRUCTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | claimed |
| CN-119948203-A | Chalcogenide thin film modifier, semiconductor substrate manufactured using the same, and semiconductor device | 秀博瑞殷株式公社 | 2025-05-06 | — | — | CN | claimed |
| CN-119758491-A | Reconfigurable super-surface device, preparation method thereof and phase compensation method | 启元实验室 | 2025-04-04 | — | — | CN | claimed |
| CN-118613702-A | MEMS pressure sensor with pressure sensing element containing phase change material | 长江先进存储产业创新中心有限责任公司 | 2024-09-06 | — | — | CN | claimed |
| CN-115696011-B | Phase change material-based electrically controllable color filter array and artificial vision system | 华中科技大学 | 2024-05-14 | — | — | CN | claimed |
| WO-2024087110-A1 | MICROELECTROMECHANICAL SYSTEM PRESSURE SENSOR WITH PRESSURE SENSING ELEMENT HAVING PHASE-CHANGE MATERIAL | YANGTZE ADVANCED MEMORY INDUSTRIAL INNOVATION CENTER CO., LTD (CN) | 2024-05-02 | — | — | WO | claimed |
| CN-117542601-B | High-toughness high-cerium-content neodymium-iron-boron magnet and preparation method thereof | 宁波中杭实业有限公司 | 2024-04-23 | — | — | CN | claimed |
| US-11963469-B2 | Phase change memory cell with an airgap to allow for the expansion and restriction of the PCM material | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2024-04-16 | — | — | US | claimed |
| CN-101110237-A | Optical information storage medium | PRODISC TECHNOLOGY INC (CN) | 2008-01-23 | — | — | CN | claimed |
| CN-1299330-C | Sulfide semiconductor mask for photoetching | SHANGHAI INST OPTICS & FINE ME (CN) | 2007-02-07 | — | — | CN | claimed |
| CN-1647209-A | Multiple data state memory cell | MICRON TECHNOLOGY INC (US) | 2005-07-27 | — | — | CN | claimed |
| CN-1624873-A | Sulfide semiconductor mask for photoetching | SHANGHAI INST OPTICS & FINE ME (CN) | 2005-06-08 | — | — | CN | claimed |
| CN-1515021-A | Gas discharge lamp | 皇家菲利浦电子有限公司 | 2004-07-21 | — | — | CN | claimed |
| CN-1355768-A | Energy-activated compositions for controlled sustained release of gases | SOUTHWEST RES INST (US) | 2002-06-26 | — | — | CN | claimed |
| US-6165687-A | Standard array, programmable image forming process | EASTMAN KODAK COMPANY (US) | 2000-12-26 | — | — | US | claimed |
| CN-2387550-Y | Infrared filter | SHANGHAI INST OF TECH PHYSICS (CN) | 2000-07-12 | — | — | CN | claimed |
| EP-0197531-B1 | THIN FILM TRANSISTOR FORMED ON INSULATING SUBSTRATE | HITACHI, LTD. (JP) | 1993-07-28 | — | — | EP | claimed |
| US-4203123-A | Thin film memory device employing amorphous semiconductor materials | BURROUGHS CORPORATION (US) | 1980-05-13 | — | — | US | claimed |