⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL27599019 | 0.87 | — | — | |
| SCHEMBL18762926 | 0.82 | — | — | |
| SCHEMBL269730 | 0.82 | — | — | |
| SCHEMBL560631 | 0.82 | — | — | |
| SCHEMBL28751739 | 0.78 | — | — | |
| SCHEMBL25308013 | 0.67 | — | — | |
| SCHEMBL7142796 | 0.67 | — | — | |
| SCHEMBL3487368 | 0.67 | — | — | |
| SCHEMBL13583619 | 0.67 | — | — | |
| SCHEMBL18963055 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250073987-A1 | SYSTEM AND PROCESS FOR THE ADDITIVE MANUFACTURING OF RF TUNABLE MATERIALS | THE CHARLES STARK DRAPER LABORATORY, INC. (US) | 2025-03-06 | — | — | US | claimed |
| CN-116746295-A | Phase change memory and method of manufacturing the same | 华为技术有限公司 | 2023-09-12 | — | — | CN | claimed |
| WO-2022241637-A1 | PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREFOR | 华为技术有限公司 | 2022-11-24 | — | — | WO | claimed |
| US-20250073987-A1 | SYSTEM AND PROCESS FOR THE ADDITIVE MANUFACTURING OF RF TUNABLE MATERIALS | THE CHARLES STARK DRAPER LABORATORY, INC. (US) | 2025-03-06 | — | — | US | disclosed |
| CN-116746295-A | Phase change memory and method of manufacturing the same | 华为技术有限公司 | 2023-09-12 | — | — | CN | disclosed |
| WO-2022241637-A1 | PHASE CHANGE MEMORY AND MANUFACTURING METHOD THEREFOR | 华为技术有限公司 | 2022-11-24 | — | — | WO | disclosed |
| CN-111261581-A | Method for manufacturing semiconductor element | 台湾积体电路制造股份有限公司 | 2020-06-09 | — | — | CN | disclosed |
| CN-107206346-A | Utilize the nano-particle preparation method of laser | 授纳诺有限公司 | 2017-09-26 | — | — | CN | disclosed |
| CN-101809669-B | Phase change memory cell and method | FREESCALE SEMICONDUCTOR, INC. (US) | 2015-07-29 | — | — | CN | disclosed |
| CN-102629661-B | Composite target sputtering to form doped phase change materials | MACRONIX INT CO LTD | 2015-02-25 | — | — | CN | disclosed |
| CN-102629661-A | Composite target sputtering to form doped phase change materials | IBM | 2012-08-08 | — | — | CN | disclosed |
| US-20110001113-A1 | PHASE CHANGE MEMORY STRUCTURES | FREESCALE SEMICONDUCTOR, INC. (US) | 2011-01-06 | — | — | US | disclosed |
| US-7811851-B2 | Phase change memory structures | FREESCALE SEMICONDUCTOR, INC. (US) | 2010-10-12 | — | — | US | disclosed |
| CN-101809669-A | Phase change memory structure | FREESCALE SEMICONDUCTOR INC | 2010-08-18 | — | — | CN | disclosed |
| US-7719039-B2 | Phase change memory structures including pillars | FREESCALE SEMICONDUCTOR, INC. (US) | 2010-05-18 | — | — | US | disclosed |
| WO-2009045635-A2 | PHASE CHANGE MEMORY STRUCTURES | FREESCALE SEMICONDUCTOR INC. (US) | 2009-04-09 | — | — | WO | disclosed |
| WO-2009042293-A1 | PHASE CHANGE MEMORY STRUCTURES | FREESCALE SEMICONDUCTOR INC. (US) | 2009-04-02 | — | — | WO | disclosed |
| US-20090085024-A1 | PHASE CHANGE MEMORY STRUCTURES | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2009-04-02 | — | — | US | disclosed |
| US-20090085023-A1 | PHASE CHANGE MEMORY STRUCTURES | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2009-04-02 | — | — | US | disclosed |
| CN-1988200-A | Phase change memory with spacer electrode side connection and manufacturing method thereof | IND TECHNOLOGY INST (CN) | 2007-06-27 | — | — | CN | disclosed |