⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30642063 | 0.82 | — | — | |
| SCHEMBL30293000 | 0.82 | — | — | |
| SCHEMBL11006141 | 0.82 | — | — | |
| SCHEMBL1257064 | 0.82 | — | — | |
| SCHEMBL8354134 | 0.82 | — | — | |
| SCHEMBL29371232 | 0.82 | — | — | |
| SCHEMBL10682808 | 0.82 | — | — | |
| SCHEMBL239980 | 0.82 | — | — | |
| SCHEMBL8354128 | 0.82 | — | — | |
| SCHEMBL1257067 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 124 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8008700-B2 | Non-volatile memory cell with embedded antifuse | SANDISK 3D LLC (US) | 2011-08-30 | — | — | US | claimed |
| US-7830697-B2 | High forward current diodes for reverse write 3D cell | SANDISK 3D LLC (US) | 2010-11-09 | — | — | US | claimed |
| JP-2010531543-A | — | — | 2010-09-24 | — | — | JP | claimed |
| WO-2010059672-A1 | INTEGRATION OF DAMASCENE TYPE DIODES AND CONDUCTIVE WIRES FOR MEMORY DEVICE | SANDISK 3D LLC (US) | 2010-05-27 | — | — | WO | claimed |
| US-20100127358-A1 | Integration of damascene type diodes and conductive wires for memory device | SANDISK 3D LLC | 2010-05-27 | — | — | US | claimed |
| EP-2165336-A1 | HIGH FORWARD CURRENT DIODES FOR REVERSE WRITE 3D CELL AND METHOD OF MAKING THEREOF | Sandisk 3D LLC (US) | 2010-03-24 | — | — | EP | claimed |
| US-7684226-B2 | Method of making high forward current diodes for reverse write 3D cell | SANDISK 3D LLC (US) | 2010-03-23 | — | — | US | claimed |
| WO-2009002477-A1 | HIGH FORWARD CURRENT DIODES FOR REVERSE WRITE 3D CELL AND METHOD OF MAKING THEREOF | SANDISK 3D LLC (US) | 2008-12-31 | — | — | WO | claimed |
| US-20080316796-A1 | Method of making high forward current diodes for reverse write 3D cell | SANDISK 3D LLC | 2008-12-25 | — | — | US | claimed |
| US-20080316809-A1 | High forward current diodes for reverse write 3D cell | SANDISK 3D LLC | 2008-12-25 | — | — | US | claimed |
| US-20080017912-A1 | Non-volatile memory cell with embedded antifuse | SANDISK 3D LLC | 2008-01-24 | — | — | US | claimed |
| WO-2024163133-A1 | METHOD OF DEPOSITING A TUNGSTEN CONTAINING LAYER | APPLIED MATERIALS, INC. (US) | 2024-08-08 | — | — | WO | disclosed |
| US-20240258109-A1 | METHOD OF DEPOSITING A TUNGSTEN CONTAINING LAYER | APPLIED MATERIALS, INC. | 2024-08-01 | — | — | US | disclosed |
| WO-2024129544-A1 | POST-TREATMENT FOR REMOVING RESIDUES FROM DIELECTRIC SURFACE | APPLIED MATERIALS, INC. (US) | 2024-06-20 | — | — | WO | disclosed |
| US-20240194605-A1 | POST-TREATMENT FOR REMOVING RESIDUES FROM DIELECTRIC SURFACE | APPLIED MATERIALS, INC. | 2024-06-13 | — | — | US | disclosed |
| US-20050260347-A1 | Formation of a silicon oxynitride layer on a high-k dielectric material | APPLIED MATERIAL, INC. | 2005-11-24 | — | — | US | disclosed |
| WO-2004094691-A1 | METHOD FOR HAFNIUM NITRIDE DEPOSITION | APPLIED MATERIALS, INC. (US) | 2004-11-04 | — | — | WO | disclosed |
| US-20040198069-A1 | Method for hafnium nitride deposition | APPLIED MATERIALS, INC. | 2004-10-07 | — | — | US | disclosed |
| US-5807613-A | Method of producing reactive element modified-aluminide diffusion coatings | CAMETOID ADVANCED TECHNOLOGIES, INC. (CA) | 1998-09-15 | — | — | US | disclosed |
| WO-1996015284-A1 | METHOD OF PRODUCING REACTIVE ELEMENT MODIFIED-ALUMINIDE DIFFUSION COATINGS | CAMETOID ADVANCED TECHNOLOGIES INC. (CA) | 1996-05-23 | — | — | WO | disclosed |