⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30121253 | 0.87 | — | — | |
| SCHEMBL8677689 | 0.87 | — | — | |
| SCHEMBL557584 | 0.87 | — | — | |
| SCHEMBL144868 | 0.87 | — | — | |
| SCHEMBL11624191 | 0.87 | — | — | |
| SCHEMBL640748 | 0.87 | — | — | |
| SCHEMBL8629754 | 0.87 | — | — | |
| SCHEMBL3370957 | 0.87 | — | — | |
| SCHEMBL704780 | 0.87 | — | — | |
| SCHEMBL29520317 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 53 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8008700-B2 | Non-volatile memory cell with embedded antifuse | SANDISK 3D LLC (US) | 2011-08-30 | — | — | US | claimed |
| US-7830697-B2 | High forward current diodes for reverse write 3D cell | SANDISK 3D LLC (US) | 2010-11-09 | — | — | US | claimed |
| JP-2010531543-A | — | — | 2010-09-24 | — | — | JP | claimed |
| WO-2010059672-A1 | INTEGRATION OF DAMASCENE TYPE DIODES AND CONDUCTIVE WIRES FOR MEMORY DEVICE | SANDISK 3D LLC (US) | 2010-05-27 | — | — | WO | claimed |
| US-20100127358-A1 | Integration of damascene type diodes and conductive wires for memory device | SANDISK 3D LLC | 2010-05-27 | — | — | US | claimed |
| EP-2165336-A1 | HIGH FORWARD CURRENT DIODES FOR REVERSE WRITE 3D CELL AND METHOD OF MAKING THEREOF | Sandisk 3D LLC (US) | 2010-03-24 | — | — | EP | claimed |
| US-7684226-B2 | Method of making high forward current diodes for reverse write 3D cell | SANDISK 3D LLC (US) | 2010-03-23 | — | — | US | claimed |
| WO-2009002477-A1 | HIGH FORWARD CURRENT DIODES FOR REVERSE WRITE 3D CELL AND METHOD OF MAKING THEREOF | SANDISK 3D LLC (US) | 2008-12-31 | — | — | WO | claimed |
| US-20080316809-A1 | High forward current diodes for reverse write 3D cell | SANDISK 3D LLC | 2008-12-25 | — | — | US | claimed |
| US-20080316796-A1 | Method of making high forward current diodes for reverse write 3D cell | SANDISK 3D LLC | 2008-12-25 | — | — | US | claimed |
| US-20080017912-A1 | Non-volatile memory cell with embedded antifuse | SANDISK 3D LLC | 2008-01-24 | — | — | US | claimed |
| US-10586593-B2 | Programmable resistive device and memory using diode as selector | ATTOPSEMI TECHNOLOGY CO., LTD (TW) | 2020-03-10 | — | — | US | disclosed |
| US-20180075906-A1 | PROGRAMMABLE RESISTIVE DEVICE AND MEMORY USING DIODE AS SELECTOR | ATTOPSEMI TECH CO LTD (TW) | 2018-03-15 | — | — | US | disclosed |
| US-9818478-B2 | Programmable resistive device and memory using diode as selector | ATTOPSEMI TECHNOLOGY CO., LTD (TW) | 2017-11-14 | — | — | US | disclosed |
| US-20140160830-A1 | Programmable Resistive Device and Memory Using Diode as Selector | ATTOPSEMI TECHNOLOGY CO., LTD (TW) | 2014-06-12 | — | — | US | disclosed |
| WO-2009002477-A1 | HIGH FORWARD CURRENT DIODES FOR REVERSE WRITE 3D CELL AND METHOD OF MAKING THEREOF | SANDISK 3D LLC (US) | 2008-12-31 | — | — | WO | disclosed |
| US-20080316809-A1 | High forward current diodes for reverse write 3D cell | SANDISK 3D LLC | 2008-12-25 | — | — | US | disclosed |
| US-20080316796-A1 | Method of making high forward current diodes for reverse write 3D cell | SANDISK 3D LLC | 2008-12-25 | — | — | US | disclosed |
| US-20080017912-A1 | Non-volatile memory cell with embedded antifuse | SANDISK 3D LLC | 2008-01-24 | — | — | US | disclosed |
| US-20080013364-A1 | Method of making non-volatile memory cell with embedded antifuse | SANDISK 3D LLC | 2008-01-17 | — | — | US | disclosed |