⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Dimethylamine SCHEMBL2879410 | 1.00 | KDM4E (0.38) | — | |
| Dimethylamine SCHEMBL29386600 | 1.00 | KDM4E (0.38) | — | |
| Dimethylamine SCHEMBL1330452 | 0.89 | — | — | |
| Dimethylamine SCHEMBL12415750 | 0.89 | — | — | |
| Dimethylamine SCHEMBL5164633 | 0.89 | — | — | |
| Dimethylamine SCHEMBL392668 | 0.89 | — | — | |
| Dimethylamine SCHEMBL1030 | 0.89 | — | — | |
| Dimethylamine SCHEMBL13695986 | 0.89 | — | — | |
| Tetramethylammonium Ion SCHEMBL28244348 | 0.84 | — | — | |
| Dimethylamine SCHEMBL733 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113990846-B | SOI device capable of resisting total dose irradiation and preparation method thereof | 哈尔滨工业大学 | 2022-07-12 | — | — | CN | claimed |
| CN-114038608-B | Low-resistivity solar cell conductive paste | 西安宏星电子浆料科技股份有限公司 | 2022-04-19 | — | — | CN | claimed |
| CN-114038608-A | Low-resistivity solar cell conductive paste | 西安宏星电子浆料科技股份有限公司 | 2022-02-11 | — | — | CN | claimed |
| CN-113990846-A | SOI device capable of resisting total dose irradiation and preparation method thereof | 哈尔滨工业大学 | 2022-01-28 | — | — | CN | claimed |
| CN-213724867-U | Purification device of penta dimethylamine tantalum | 芯越芯(南京)电子科技有限公司 | 2021-07-20 | — | — | CN | claimed |
| CN-104651809-B | A kind of preparation method that the alloy coat of modifier containing permanent chemical is covered in graphite-pipe | 农业部亚热带果品蔬菜质量监督检验测试中心 | 2017-07-07 | — | — | CN | claimed |
| CN-104651809-A | Preparation method for coating alloy coating containing permanent chemical modifier on graphite pipe | QUALITY SUPERVISION AND TESTING CT OF SUBTROPICAL FRUIT AND VEGETABLE MINISTRY OF AGRICULTURE | 2015-05-27 | — | — | CN | claimed |
| CN-102543850-A | Method of processing low K dielectric films | APPLIED MATERIALS INC | 2012-07-04 | — | — | CN | claimed |
| CN-102144281-A | In-situ chamber treatment and deposition process | APPLIED MATERIALS INC | 2011-08-03 | — | — | CN | claimed |
| CN-101448977-B | Apparatus and process for plasma-enhanced atomic layer deposition | APPLIED MATERIALS INC | 2010-12-15 | — | — | CN | claimed |
| US-20100094070-A1 | ETHYLENE TRIMERIZATION USING A SUPPORTED CHROMIUM-TANTALUM CATALYST | HEADWATERS TECHNOLOGY INNOVATION, LLC (US) | 2010-04-15 | — | — | US | claimed |
| CN-101448977-A | Apparatus and process for plasma-enhanced atomic layer deposition | APPLIED MATERIALS INC (US) | 2009-06-03 | — | — | CN | claimed |
| CN-100452386-C | Semiconductor device and method for manufacturing the same | TAIWAN SEMICONDUCTOR MFG (CN) | 2009-01-14 | — | — | CN | claimed |
| CN-1866495-A | Method for manufacturing copper dual damascene structure | UMC CORP (CN) | 2006-11-22 | — | — | CN | claimed |
| CN-1783477-A | Semiconductor device and method for manufacturing the same | TAIWAN SEMICONDUCTOR MFG (CN) | 2006-06-07 | — | — | CN | claimed |
| CN-117545874-A | Concentration sensor for precursor delivery system | 应用材料公司 | 2024-02-09 | — | — | CN | disclosed |
| CN-117263995-A | Organometallic compound and thin film using the same | 艾慕化学株式会社 | 2023-12-22 | — | — | CN | disclosed |
| CN-1204607-C | Method for depositing diffusion barrier layer | MOTOROLA INC (US) | 2005-06-01 | — | — | CN | disclosed |
| CN-1574337-A | Semiconductor device and method of manufacturing the same | TOKYO SHIBAURA ELECTRIC CO (JP) | 2005-02-02 | — | — | CN | disclosed |
| CN-1195188-A | Method for depositing diffusion barrier | MOTOROLA INC (US) | 1998-10-07 | — | — | CN | disclosed |