Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MCL1 | Q07820 | 4/20 | 0.46 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | MEN1 | O00255 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.33 |
| ▸ | CA12 | O43570 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 1/20 | 0.33 |
| ▸ | CA2 | P00918 | 1/20 | 0.33 |
| ▸ | CA9 | Q16790 | 1/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | GAA | P10253 | 1/20 | 0.32 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.30 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3415463 | 0.88 | MCL1 (0.36) | MCL1ALDH1A1GAA | |
| SCHEMBL27673034 | 0.70 | — | — | |
| SCHEMBL11252383 | 0.68 | — | — | |
| SCHEMBL30968390 | 0.67 | — | — | |
| SCHEMBL3072012 | 0.67 | KDM4E (0.31) | KDM4EMEN1KMT2A | |
| SCHEMBL670466 | 0.65 | — | — | |
| SCHEMBL9202307 | 0.65 | MCL1 (0.52) | MCL1KDM4EMEN1LMNAMAPT | |
| SCHEMBL27679243 | 0.65 | — | — | |
| Cyanoacetamide SCHEMBL28053682 | 0.65 | — | — | |
| Cyanoacetamide SCHEMBL163613 | 0.65 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110997983-B | Crease-resistant copper foil, electrode comprising same, secondary battery comprising same, and method for manufacturing same | SK纳力世有限公司 | 2022-10-21 | — | — | CN | claimed |
| CN-110997983-A | Crease-resistant copper foil, electrode comprising same, secondary battery comprising same, and method for manufacturing same | KCF技术有限公司 | 2020-04-10 | — | — | CN | claimed |
| EP-0598763-B1 | ACID BATH FOR THE GALVANIC DEPOSITION OF COPPER, AND THE USE OF SUCH A BATH | ATOTECH DEUTSCHLAND GMBH (DE) | 1995-12-13 | — | — | EP | claimed |
| US-5433840-A | Polyoxyalkylene glycol ethers, copper salts and acid | ATOTECH DEUTSCHLAND GMBH (DE) | 1995-07-18 | — | — | US | claimed |
| EP-0554275-B1 | ACID BATH FOR COPPER PLATING, AND A PROCESS USING A BATH OF THIS TYPE FOR THIS PURPOSE | ATOTECH DEUTSCHLAND GMBH (DE) | 1994-12-14 | — | — | EP | claimed |
| EP-4640926-A1 | COPPER FOIL CAPABLE OF PREVENTING TEAR OR WRINKLE DEFECTS, ELECTRODE COMPRISING SAME, SECONDARY BATTERY COMPRISING SAME, AND MANUFACTURING METHOD THEREFOR | SK Nexilis Co., Ltd. (KR) | 2025-10-29 | — | — | EP | disclosed |
| US-12439528-B2 | Method of preparing a high density interconnect printed circuit board including microvias filled with copper | Atotech Deutschland GmbH & Co. KG (DE) | 2025-10-07 | — | — | US | disclosed |
| EP-4624633-A1 | COPPER FOIL CAPABLE OF PREVENTING TEAR OR WRINKLE DEFECTS, ELECTRODE COMPRISING SAME, SECONDARY BATTERY COMPRISING SAME, AND MANUFACTURING METHOD THEREFOR | SK Nexilis Co., Ltd. (KR) | 2025-10-01 | — | — | EP | disclosed |
| US-20250253351-A1 | ELECTROLYTIC COPPER FOIL FOR CURRENT COLLECTOR OF SECONDARY BATTERY | LOTTE ENERGY MATERIALS CORPORATION (KR) | 2025-08-07 | — | — | US | disclosed |
| US-20250253352-A1 | ELECTROLYTIC COPPER FOIL FOR CURRENT COLLECTOR OF SECONDARY BATTERY | LOTTE ENERGY MATERIALS CORPORATION (KR) | 2025-08-07 | — | — | US | disclosed |
| CN-113924669-B | Copper foil capable of preventing occurrence of wrinkles, electrode comprising the same, secondary battery comprising the same, and method for manufacturing the same | SK纳力世有限公司 | 2025-04-29 | — | — | CN | disclosed |
| US-12281394-B2 | Copper foil with anti-wrinkle property, electrode comprising same, secondary battery comprising same, and manufacturing method therefor | SK NEXILIS CO., LTD. (KR) | 2025-04-22 | — | — | US | disclosed |
| EP-2399281-B1 | PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) | ATOTECH DEUTSCHLAND GMBH (DE) | 2016-04-20 | — | — | EP | disclosed |
| CN-102318041-B | PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) | ATOTECH DEUTSCHLAND GMBH | 2014-05-07 | — | — | CN | disclosed |
| EP-2611950-B1 | PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV), WITH HEATED SUBSTRATE AND COOLED ELECTROLYTE | ATOTECH DEUTSCHLAND GMBH (DE) | 2013-11-13 | — | — | EP | disclosed |
| CN-103038397-A | Method for electrodepositing chip-to-chip, chip-to-wafer, and wafer-to-wafer copper interconnects in Through Silicon Vias (TSVs) by heating the substrate and cooling the electrolyte | ATOTECH DEUTSCHLAND GMBH | 2013-04-10 | — | — | CN | disclosed |
| CN-102318041-A | PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) | ATOTECH DEUTSCHLAND GMBH | 2012-01-11 | — | — | CN | disclosed |
| US-20100206737-A1 | PROCESS FOR ELECTRODEPOSITION OF COPPER CHIP TO CHIP, CHIP TO WAFER AND WAFER TO WAFER INTERCONNECTS IN THROUGH-SILICON VIAS (TSV) | ATOTECH DEUTSCHLAND GMBH (DE) | 2010-08-19 | — | — | US | disclosed |
| US-6425996-B1 | ADJUSTING ELECTROCONDUCTIVITY | ATOTECH DEUTSCHLAND GMBH (DE) | 2002-07-30 | — | — | US | disclosed |
| US-5849171-A | Acid bath for copper plating and process with the use of this combination | ATOTECH DEUTSCHLAND GMBH (DE) | 1998-12-15 | — | — | US | disclosed |